128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

Synchronous SRAM

文件：711.63 Kbytes Page：20 Pages

封装/外壳：100-LQFP 包装：管件 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器

Synchronous SRAM

文件：711.63 Kbytes Page：20 Pages

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

128K X 36, 3.3V Synchronous SRAM with ZBT™ Feature, Burst Counter and Flow-Through Outputs

Features ◆ 128K x 36 memory configuration, flow-through outputs ◆ Supports high performance system speed - 95 MHz (8ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized signal eliminates the need to control OE

Synchronous SRAM

文件：711.63 Kbytes Page：20 Pages