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71V2546价格

参考价格:¥27.1413

型号:71V2546S100PFG 品牌:IDT 备注:这里有71V2546多少钱,2026年最近7天走势,今日出价,今日竞价,71V2546批发/采购报价,71V2546行情走势销售排行榜,71V2546报价。
型号 功能描述 生产厂家 企业 LOGO 操作
71V2546

3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O

The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the bu High performance system speed - 150 MHz (3.8 ns Clock-to-Data Access)\nZBTTM Feature - No dead cycles between write and read cycles\nInternally synchronized output buffer enable eliminates the need to control OE\nSingle R/W (READ/WRITE) control pin\nPositive clock-edge triggered address, data, and c;

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

封装/外壳:119-BGA 包装:管件 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

RENESAS

瑞萨

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

封装/外壳:119-BGA 包装:卷带(TR) 描述:IC SRAM 4.5MBIT PARALLEL 100MHZ 集成电路(IC) 存储器

RENESAS

瑞萨

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

更新时间:2026-5-24 22:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
26+
QFP
20000
公司只有正品,实单来谈
IDT
2026+
QFP
996880
只做原装 欢迎来电资询
Renesas Electronics Corporatio
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
IDT
24+
BGA
230
71V2546S150PF8
25+
502
502
IDT
16+
QFP
2500
进口原装现货/价格优势!
RENESAS(瑞萨)/IDT
2447
PBGA-119(14x22)
315000
84个/托盘一级代理专营品牌!原装正品,优势现货,长
FUJ
最新
BGAQFP
1680
只做进口原装!假一罚十!绝对有货!
IDT
23+
QFP
5070
所有报价以当天为准
IDT, Integrated Device Technol
21+
67-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营

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