71V2546价格
参考价格:¥27.1413
型号:71V2546S100PFG 品牌:IDT 备注:这里有71V2546多少钱,2026年最近7天走势,今日出价,今日竞价,71V2546批发/采购报价,71V2546行情走势销售排行榜,71V2546报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
71V2546 | 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the bu High performance system speed - 150 MHz (3.8 ns Clock-to-Data Access)\nZBTTM Feature - No dead cycles between write and read cycles\nInternally synchronized output buffer enable eliminates the need to control OE\nSingle R/W (READ/WRITE) control pin\nPositive clock-edge triggered address, data, and c; | RENESAS 瑞萨 | ||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI | RENESAS 瑞萨 | |||
封装/外壳:119-BGA 包装:管件 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路(IC) 存储器 | RENESAS 瑞萨 | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
封装/外壳:119-BGA 包装:卷带(TR) 描述:IC SRAM 4.5MBIT PARALLEL 100MHZ 集成电路(IC) 存储器 | RENESAS 瑞萨 | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT | |||
3.3V Synchronous ZBT SRAM 文件:733.03 Kbytes Page:21 Pages | IDT |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
26+ |
QFP |
20000 |
公司只有正品,实单来谈 |
|||
IDT |
2026+ |
QFP |
996880 |
只做原装 欢迎来电资询 |
|||
Renesas Electronics Corporatio |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
IDT |
24+ |
BGA |
230 |
||||
71V2546S150PF8 |
25+ |
502 |
502 |
||||
IDT |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
|||
RENESAS(瑞萨)/IDT |
2447 |
PBGA-119(14x22) |
315000 |
84个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
FUJ |
最新 |
BGAQFP |
1680 |
只做进口原装!假一罚十!绝对有货! |
|||
IDT |
23+ |
QFP |
5070 |
所有报价以当天为准 |
|||
IDT, Integrated Device Technol |
21+ |
67-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
71V2546芯片相关品牌
71V2546规格书下载地址
71V2546参数引脚图相关
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71V2546数据表相关新闻
716W-X2/0保证原装正品,现货价美
716W-X2/0保证原装正品,现货价美
2024-8-15721-833/001-000
721-833/001-000
2023-4-197211MD9AV2BE
7211MD9AV2BE
2022-12-287165-0796新到货只做原装,诚信为本!
16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
2022-8-12719502C-2PT
https://hch01.114ic.com/
2020-11-137-215/R6C-AQ1R2B/3T原装现货
定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
2019-11-4
DdatasheetPDF页码索引
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