71V2546S价格

参考价格:¥27.1413

型号:71V2546S100PFG 品牌:IDT 备注:这里有71V2546S多少钱,2025年最近7天走势,今日出价,今日竞价,71V2546S批发/采购报价,71V2546S行情走势销售排行榜,71V2546S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
71V2546S

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 150 MHz (3.8 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

封装/外壳:119-BGA 包装:管件 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

ETC

知名厂家

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

封装/外壳:119-BGA 包装:卷带(TR) 描述:IC SRAM 4.5MBIT PARALLEL 100MHZ 集成电路(IC) 存储器

ETC

知名厂家

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

文件:1.00488 Mbytes Page:28 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

文件:1.00488 Mbytes Page:28 Pages

IDT

3.3V Synchronous ZBT SRAM

文件:733.03 Kbytes Page:21 Pages

IDT

更新时间:2025-12-26 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
2021+
PBGA-119(14x22)
499
IDT
16+
QFP
2500
进口原装现货/价格优势!
IDT
23+
QFP
198589
原厂原装正品现货!!
RENESAS(瑞萨)/IDT
24+
TQFP100(14x20)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IDT, Integrated Device Technol
21+
67-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
IDT
BGAQFP
6688
15
现货库存
IDT
25+
QFP
996880
只做原装,欢迎来电资询
IDT
23+
QFP
5070
所有报价以当天为准
71V2546S150PF8
25+
502
502
IDT
23+
TQFP-100
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、

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