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71V124价格

参考价格：￥8.9351

型号：71V124SA10PHG 品牌：IDT 备注：这里有71V124多少钱，2026年最近7天走势，今日出价，今日竞价，71V124批发/采购报价，71V124行情走势销售排行榜，71V124报价。

型号	功能描述	生产厂家企业	LOGO
71V124	3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is u JEDEC revolutionary pinout (center power/GND) for reduced noise\nEqual access and cycle times – Commercial: 10/12/15/20ns – Industrial: 10/12/15/20ns\nOne Chip Select plus one Output Enable pin\nInputs and outputs are LVTTL-compatible\nSingle 3.3V supply\nLow power consumption via chip deselect\nAva;	RENESAS 瑞萨	RENESAS
71V124SA	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10PHG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10PHG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10PHGI	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10PHGI8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10TYG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10TYG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10YG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA10YG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12PHG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12PHG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12PHGI	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12PHGI8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12TYG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12TYG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12TYGI	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12TYGI8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12YG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12YG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12YGI	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA12YGI8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15PHG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15PHG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15PHGI	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15PHGI8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15TYG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15TYG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15TYGI	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15TYGI8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15YG	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15YG8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15YGI	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V124SA15YGI8	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible	RENESAS 瑞萨	RENESAS
71V12410PHGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12410TYGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12410YGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12412PHGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12412TYGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12412YGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12415PHGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12415TYGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V12415YGI8	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power and Ground Pinout 文件：68.86 Kbytes Page：8 Pages	IDT	IDT
71V124SA10PHG8	封装/外壳：32-SOIC（0.400"，10.16mm 宽）包装：管件描述：IC SRAM 1MBIT PARALLEL 32TSOP II 集成电路（IC）存储器	RENESAS 瑞萨	RENESAS
71V124SA10PHGI	封装/外壳：32-SOIC（0.400"，10.16mm 宽）包装：管件描述：IC SRAM 1MBIT PARALLEL 32TSOP II 集成电路（IC）存储器	RENESAS 瑞萨	RENESAS
IDT71V124	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for	IDT	IDT
IDT71V124SA	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for	IDT	IDT
IDT71V124SA-PH	Supports the ATmega2560, ATmega1280 and ATmega640 文件：704.79 Kbytes Page：17 Pages	ATMEL 爱特梅尔	ATMEL
IDT71V124SA-PH	STK503 User Guide 文件：704.79 Kbytes Page：17 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IDT71V124SA-TY	STK503 User Guide 文件：704.79 Kbytes Page：17 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

71V124产品属性

类型
描述
Density (Kb)：
1024
Bus Width (bits)：
8
Core Voltage (V)：
3.3
Pkg. Type：
SOJ
Organization：
128K x 8
I/O Voltage (V)：
3.3
Access Time (ns)：
10
Temp. Range：
-40 to 85°C
Architecture：
Asynchronous

71V124供应商更多...

更新时间：2026-5-23 22:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳艾斯科技有限公司	71V124SA10PH	IDT	24+	NA	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市昌和盛利电子有限公司	71V124	IDT	26+	PLCC-68	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市科芯源微电子有限公司	71V124SA10Y	IDT	2026+	SOJ32	54658	百分百原装现货实单必成	询价
深圳市威雅利发展有限公司	71V124SA12PHG	IDT	2101+	TSOP	54	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科恒伟业电子有限公司	71V124S15Y-TR	IDT	2450+	SOJ	9850	只做原厂原装正品现货或订货假一赔十!	询价
中天科工半导体（深圳）有限公司	71V124SA12PHGI	RENESAS/瑞萨	25+	TSOP-32	32360	RENESAS/瑞萨全新特价71V124SA12PHGI即刻询购立享优惠#长期有货	询价
深圳市福田区绿盛电子商行	71V124SA12YG	IDT	2018+		26976	代理原装现货/特价热卖!	询价
深圳市博科胜电子有限公司	71V124SA12YG	IDT	22+	SOJ32	8900	全新正品现货有挂就有现货	询价
瀚佳科技(深圳)有限公司	71V124SA15TYGI	IDT, Integrated Device Technol	24+	32-SOJ	56200	一级代理/放心采购	询价
深圳市恒达亿科技有限公司	71V124SA10PH	IDT	25+	SOP32	4500	全新原装、诚信经营、公司现货销售	询价

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定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
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DdatasheetPDF页码索引

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找IC，尽在114IC

71V124价格

71V124产品属性

71V124供应商更多...

71V124芯片相关品牌

71V124规格书下载地址

71V124参数引脚图相关

71V124数据表相关新闻

716W-X2/0保证原装正品，现货价美

721-833/001-000

7211MD9AV2BE

7165-0796新到货只做原装，诚信为本！

719502C-2PT

7-215/R6C-AQ1R2B/3T原装现货

DdatasheetPDF页码索引