1000 Base-T Magnetic Modules

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1000 Base-T Magnetic module

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30V N-Channel PowerTrench짰 SyncFET?

General Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky dio

包装：散装 描述：6690 1 302-00: BGT 84TX3H RANGIE

包装：散装 描述：6690 1 302-00: BGT 84TX3H RANGIE

Round Conductor, Flat Cable, IDC Connectors

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IDC刺破式连接器(牛角/简牛)

IDC刺破式连接器(牛角/简牛)

Metric Ball End Hex Keys Chrome Finish

文件：269.4 Kbytes Page：1 Pages

Metric Ball End Hex Keys Chrome Finish

文件：269.4 Kbytes Page：1 Pages

STATFREE MATERIAL, DISSIPATIVE, RUBBER, 2-LAYER, 0.060 (1.5mm)

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System DC Power Supply

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固态继电器(可控硅输出)

Relay, SE Relays, solid state, SPST NO, 90A, 48...600 VAC, 90...280 VAC Uc, SCR AC zero cross, screw terminal

文件：188.82 Kbytes Page：3 Pages

Relay, SE Relays, solid state, SPST NO, 90A, 48...600 VAC, 3...32 VDC Uc, SCR AC zero cross, screw terminal

文件：194.53 Kbytes Page：3 Pages

N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 12 m

N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 12 m

30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky di

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with compar

ROM Interface IC

GENERAL DESCRIPTION The MSM6690 can drive three devices of 131,072 x 8-bit EPROM or Mask ROM. The MSM6690 contains a built-in internal address generator circuit and one external clock input that enables contiued serial read operations. The internal address counter is automatically incremented by