丝印代码：4P06R；MOSFET

Features - High density cell design for ultralow RDS(ON). - Fully characterized avalanche voltage and current. - Excellent package for good heat dissipation. - AEC-Q101 Qualified.

丝印代码：4P06R；MOSFET

Features - High density cell design for ultralow RDS(ON). - Fully characterized avalanche voltage and current. - Excellent package for good heat dissipation.

封装/外壳：HC-49/US 包装：卷带（TR） 描述：CRYSTAL 6.0000MHZ 20PF SMD 晶体，振荡器，谐振器 晶体

封装/外壳：HC-49/US 包装：卷带（TR） 描述：CRYSTAL 6.0000MHZ 32PF SMD 晶体，振荡器，谐振器 晶体

POWER FIELD EFFECT TRANSISTOR

POWER FIELD EFFECT TRANSISTOR

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

N-Channel 60 V (D-S) MOSFET

文件：1.00408 Mbytes Page：8 Pages

60V P-Channel Enhancement Mode MOSFET

文件：428.64 Kbytes Page：8 Pages