4 Amps, 900 Volts N-CHANNEL POWER MOSFET

• VDS=900V \n• RDS(ON)=4.2Ω @ VGS=10V \n• High switching speed \n• 100% avalanche tested \n• Improved dv/dt capability;

Fast Switching Speed

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4 Amps, 900 Volts N-CHANNEL MOSFET

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4 Amps, 900 Volts N-CHANNEL POWER MOSFET

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丝印代码：4N90K5；N-channel 900 V, 1.90 廓 typ.,3 A MDmesh??K5 Power MOSFET in a DPAK package

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丝印代码：4N90K5；N-channel 900 V, 1.90 廓 typ., 4 A MDmesh??K5 Power MOSFET in a TO-220FP package

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丝印代码：4N90K5；N-channel 900 V, 1.90 廓 typ.,3 A MDmesh??K5 Power MOSFET in a TO-220 package

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N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi

4A, 900V N-CHANNEL POWER MOSFET

The UTC 4N90-CQ  provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications. 0  RDS(ON) < 5.3 Ω @ VGS=10V, ID=2.0A Low Reverse Transfer Capacitance Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness;

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

The UTC 4N90-N is a N-channel enhancement MOSFETadopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also can withstand high energy pul • RDS(ON) < 4.2Ω @ VGS=10V, ID=2A \n• High switching speed \n• 100% avalanche tested \n• Improved dv/dt capability;

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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4.0A, 900V N-CHANNEL POWER MOSFET

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4.0A, 900V N-CHANNEL POWER MOSFET

文件：197.15 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：184.95 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL MOSFET

文件：165.57 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：184.95 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：184.95 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：184.95 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL MOSFET

文件：165.57 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：184.95 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

文件：184.95 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：231.04 Kbytes Page：7 Pages

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT