| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4N90-N | 4 Amps, 900 Volts N-CHANNEL POWER MOSFET The UTC 4N90-N is a N-channel enhancement MOSFETadopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also can withstand high energy pul • RDS(ON) < 4.2Ω @ VGS=10V, ID=2A \n• High switching speed \n• 100% avalanche tested \n• Improved dv/dt capability; | UTC 友顺 | ||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT | STMICROELECTRONICS 意法半导体 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT | STMICROELECTRONICS 意法半导体 |
4N90-N产品属性
- 类型
描述
- Vdss(V):
300
- Vgss(V):
±30
- Id(A):
4
- Package:
TO-251TO-252
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
24+ |
TO-252 |
50000 |
只做原装,欢迎询价,量大价优 |
|||
UTC/友顺 |
25+ |
TO-252 |
50000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
UTC/友顺 |
25+ |
TO-252 |
50000 |
原装现货,客户工厂料 |
4N90-N规格书下载地址
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涨价
2021-3-314节点起步!戴尔科技云平台迎来多项更新-如需了解请认真阅读
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2020-6-30
DdatasheetPDF页码索引
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