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型号 功能描述 生产厂家 企业 LOGO 操作
4N90-N

4 Amps, 900 Volts N-CHANNEL POWER MOSFET

The UTC 4N90-N is a N-channel enhancement MOSFETadopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also can withstand high energy pul • RDS(ON) < 4.2Ω @ VGS=10V, ID=2A \n• High switching speed \n• 100% avalanche tested \n• Improved dv/dt capability;

UTC

友顺

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

STMICROELECTRONICS

意法半导体

4N90-N产品属性

  • 类型

    描述

  • Vdss(V):

    300

  • Vgss(V):

    ±30

  • Id(A):

    4

  • Package:

    TO-251TO-252

更新时间:2026-8-4 17:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
24+
TO-252
50000
只做原装,欢迎询价,量大价优
UTC/友顺
25+
TO-252
50000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
UTC/友顺
25+
TO-252
50000
原装现货,客户工厂料

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