General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V

• Low gate charge ( typically 24 nC)

• Low Crss ( typically 9.5 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability