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FQPF4N90价格
参考价格：￥3.2817
型号：FQPF4N90C 品牌：Fairchild 备注：这里有FQPF4N90多少钱，2025年最近7天走势，今日出价，今日竞价，FQPF4N90批发/采购报价，FQPF4N90行情走势销售排行榜，FQPF4N90报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQPF4N90 | 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 |   | |
FQPF4N90 | 900V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
Isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | ||
N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi | Fairchild 仙童半导体 | | ||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | Fairchild 仙童半导体 | | ||
功率 MOSFET，N 沟道，QFET®，900 V，4 A，4.2 Ω，TO-220F | ONSEMI 安森美半导体 | | ||
N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi | Fairchild 仙童半导体 | | ||
4 Amps, 900 Volts N-CHANNEL POWER MOSFET 文件：184.95 Kbytes Page：6 Pages | UTC 友顺 | | ||
Fast Switching Speed 文件：65.65 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
4 Amps, 900 Volts N-CHANNEL MOSFET 文件：165.57 Kbytes Page：6 Pages | UTC 友顺 | | ||
4.0A, 900V N-CHANNEL POWER MOSFET 文件：197.15 Kbytes Page：5 Pages | UTC 友顺 | |
FQPF4N90产品属性
- 类型
描述
- 型号
FQPF4N90
- 功能描述
MOSFET 900V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
TO-220F |
548 |
原装正品,假一罚十! |
|||
FSC |
05+ |
TO-220F |
400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ONSemi |
2140 |
TO-220FP |
25545 |
全新原装公司现货
|
|||
FAIRCHILD/仙童 |
25+ |
TO-220F |
45000 |
FAIRCHILD/仙童全新现货FQPF4N90C即刻询购立享优惠#长期有排单订 |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
24+ |
N/A |
15073 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
FAIRCHILD |
25+23+ |
TO-220F |
43048 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD |
23+ |
TO-220F |
65400 |
FQPF4N90规格书下载地址
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DdatasheetPDF页码索引
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