4A, 400V N-CHANNEL POWER MOSFET

The UTC 4N40K-MT is a N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with planar stripeand DMOS technology. This technology specializes in allowing aminimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanch RDS(ON) < 1.4Ω @ VGS = 10 V, ID = 2.0 A High switching speed 100% avalanche tested;

PHOTO SCR OPTOCOUPLERS

DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • 10 A, T2L compatible, solid state relay • 25 W logic indicator lamp driver • 400 V symmetrical transistor c

TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM

T MOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to with

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX4N40E is supplied

PowerMOS transistors Avalanche energy rated

文件：78.31 Kbytes Page：9 Pages

PowerMOS transistors Avalanche energy rated

文件：78.31 Kbytes Page：9 Pages