PHOTO SCR OPTOCOUPLERS

DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • 10 A, T2L compatible, solid state relay • 25 W logic indicator lamp driver • 400 V symmetrical transistor c

4A, 400V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

Fast Switching

FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.1Ω(Max) ·Fast Switching APPLICATIONS ·Switch mode power supply.

Optically Coupled SCR Isolators

Photo SCR Single Channel Dip, Photo SCR

Photo SCR

Photo SCR Single Channel Dip, Photo SCR

4A, 400V N-CHANNEL POWER MOSFET

The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanc • High switching speed \n• 100% avalanche tested;

封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：OPTOISOLATOR 5.3KV SCR 6DIP 隔离器 光隔离器 - 双向可控硅，SCR 输出

PHOTO SCR OPTOCOUPLERS

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4A, 400V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

4A, 400V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

4A, 400V N-CHANNEL POWER MOSFET

The UTC 4N40K-MT is a N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with planar stripeand DMOS technology. This technology specializes in allowing aminimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanch RDS(ON) < 1.4Ω @ VGS = 10 V, ID = 2.0 A High switching speed 100% avalanche tested;

4A, 400V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

4A, 400V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

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isc N-Channel MOSFET Transistor

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封装/外壳：6-DIP（0.400"，10.16mm） 包装：管件 描述：OPTOISOLATOR 5.3KV SCR 6DIP 隔离器 光隔离器 - 双向可控硅，SCR 输出

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-Channel 600 V (D-S) Power MOSFET

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Power MOSFET

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N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：189.48 Kbytes Page：5 Pages

Planar Power MOSFET (N-CH)

TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM

T MOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to with

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX4N40E is supplied

PowerMOS transistors Avalanche energy rated

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PowerMOS transistors Avalanche energy rated

文件：78.31 Kbytes Page：9 Pages