isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM

T MOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to with

TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM

PHOTO SCR OPTOCOUPLERS

DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • 10 A, T2L compatible, solid state relay • 25 W logic indicator lamp driver • 400 V symmetrical transistor c

Fast Switching

FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.1Ω(Max) ·Fast Switching APPLICATIONS ·Switch mode power supply.

Optically Coupled SCR Isolators

Photo SCR Single Channel Dip, Photo SCR

Photo SCR

Photo SCR Single Channel Dip, Photo SCR

PHOTO SCR OPTOCOUPLERS

文件：420.41 Kbytes Page：5 Pages