SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

文件：126.91 Kbytes Page：5 Pages

Guard ring for enhanced ruggedness and long term reliability

文件：224.66 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：185.71 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

Center tap module

文件：224.66 Kbytes Page：4 Pages

封装/外壳：TO-244AB 包装：散装 描述：DIODE MODULE 80V 200A TO244AB 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY RECTIFIER

文件：126.91 Kbytes Page：5 Pages

SCHOTTKY RECTIFIER

文件：218.23 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：185.71 Kbytes Page：4 Pages

封装/外壳：PRM4 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V PRM4 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY RECTIFIER

文件：185.71 Kbytes Page：4 Pages

Schottky Rectifier, 400 A

文件：113.83 Kbytes Page：7 Pages

SCHOTTKY RECTIFIER

文件：126.91 Kbytes Page：5 Pages

Schottky Rectifier, 400 A

功率模块

SCHOTTKY RECTIFIER

文件：218.23 Kbytes Page：4 Pages

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

文件：22.71 Kbytes Page：2 Pages