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3SK2价格

参考价格：￥0.9100

型号：3SK200-Q 品牌：Panasonic 备注：这里有3SK2多少钱，2025年最近7天走势，今日出价，今日竞价，3SK2批发/采购报价，3SK2行情走势销售排行榜，3SK2报价。

型号	功能描述	生产厂家企业	LOGO
3SK203	MES FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD	RENESAS 瑞萨	RENESAS
3SK205	MES FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD	RENESAS 瑞萨	RENESAS
3SK206	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss: 0.02 pF TYP. • High GPS: 20 dB TYP. • Low NF: 1.1 dB TYP.	NEC 瑞萨	NEC
3SK207	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low reverse transfer capacitance: Crss = 0.015 pF (typ.) Low noise figure: NF = 1.9dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK22	SILICON N CHANNEL JUNCTION TYPE FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. FEATURES • High Power Gain : Gps=20dB (Typ. ) (f=100MHz) • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz) • High Forward Transfer Admittance : \|y fs \| = 7ms (Typ.) (f=lkHz) • High Input Impedance : Riss = 12kfi (Typ.) (f=100MHz) • Low	TOSHIBA 东芝	TOSHIBA
3SK222	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 92 dBm TYP. @ f = 200 MHz, GR = –30 dB • Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f =	RENESAS 瑞萨	RENESAS
3SK222	RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB • Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz	NEC 瑞萨	NEC
3SK223	RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB • Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz) NF2 = 0.9 dB TYP. (f = 55 MHz) • High Power Gain: GPS = 20 dB TYP. (f = 470 MHz) • Enhancement Type.	NEC 瑞萨	NEC
3SK223	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 101 dBμ TYP. @ f = 470 MHz, GR = –30 dB • Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz) NF2 = 0.9 dB TYP. (f = 55 MHz) • Hig	RENESAS 瑞萨	RENESAS
3SK224	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain: GPS = 17 dB TYP. (f = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting: Emb	RENESAS 瑞萨	RENESAS
3SK224	RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure: NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain: GPS = 17 dB TYP. (f = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting: Embosse	NEC 瑞萨	NEC
3SK225	N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF, UHF RF AMPLIFIER APPLIATIONS) TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications ● Superior cross modulation performance. ● Low noise figure: NF = 2.0dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK226	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER , FM TUNER APPLICATIONS) TV Tuner, VHF RF Amplifier Applications FM Tuner Applications • Superior cross modulation performance. • Low reverse transfer capacitance: Crss= 0.015 pF (typ.) • Low noise figure: NF = 1.1dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK230	MOS FIELD EFFECT TRANSISTOR RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 108 dBμ (TYP.) @f = 470 MHz, GR = −30 dB • Low Noise Figure NF1 = 2.2 dB TYP. (@ = 470 MHz) NF2 = 0.9 dB TYP. (@ = 55 MHz) •	RENESAS 瑞萨	RENESAS
3SK232	TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance. • Low reverse transfer capacitance.: Crss= 20 fF (typ.) • Low noise figure.: NF = 1.5dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK240	N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV Tuner, UHF RF Amplifier Applications	TOSHIBA 东芝	TOSHIBA
3SK242	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. (f = 200 MHz) • Suitable for use as RF amplifier in VHF TV tuner. • Small Package : 4 Pins	RENESAS 瑞萨	RENESAS
3SK242-T1	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. (f = 200 MHz) • Suitable for use as RF amplifier in VHF TV tuner. • Small Package : 4 Pins	RENESAS 瑞萨	RENESAS
3SK242-T2	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. (f = 200 MHz) • Suitable for use as RF amplifier in VHF TV tuner. • Small Package : 4 Pins	RENESAS 瑞萨	RENESAS
3SK244	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Ultra Low Noise Figure : NF = 2.2 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 17 dB TYP. (f = 900 MHz) • Low Reverse Transfer Capacitance Crss = 0.015 pF TYP. • Suitable	RENESAS 瑞萨	RENESAS
3SK245	MOS FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain : GPS = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting:	RENESAS 瑞萨	RENESAS
3SK246	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD	RENESAS 瑞萨	RENESAS
3SK249	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low reverse transfer capacitance: Crss = 20 fF (typ.) Low noise figure.: NF = 1.5dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK249	TV TUNER, UHF RF AMPLIFIER APPLICATION TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low reverse transfer capacitance: Crss = 20 fF (typ.) Low noise figure.: NF = 1.5dB (typ.)	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
3SK252	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz	RENESAS 瑞萨	RENESAS
3SK252	RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automatically Mounting : Embossed Type Taping	NEC 瑞萨	NEC
3SK253	RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Package : 4 Pins Mini Mold	NEC 瑞萨	NEC
3SK253	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for use as RF amplif	RENESAS 瑞萨	RENESAS
3SK254	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 4	RENESAS 瑞萨	RENESAS
3SK254	RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automaticall	NEC 瑞萨	NEC
3SK255	RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for uses as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Small Package : 4 Pins Sup	NEC 瑞萨	NEC
3SK255	MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low VDD Use : (VDS = 3.5 V) • Driving Battery • Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz) • Suitable for uses as RF	RENESAS 瑞萨	RENESAS
3SK256	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. Low reverse transfer capacitance: Crss = 0.015 pF (typ.) Low noise figure: NF = 1.9dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK257	N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER, VHF, UHF RF AMPLIFIER APPLICATIONS) TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS Superior Cross Modulation Performance. Low Noise Figure : NF = 3.0dB(Typ.)	TOSHIBA 东芝	TOSHIBA
3SK258	N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS) TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS ● Super Cross Modulation Performance. ● Low Reverse Transfer Capacitance : Crss = 0.015pF (Typ.) ● Low Noise Figure : NF = 1.1dBB (Typ.)	TOSHIBA 东芝	TOSHIBA
3SK259	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF, VHF WIDE BAND RF AMPLIFIER APPLICATIONS) TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS	TOSHIBA 东芝	TOSHIBA
3SK260	N CHANNEL DUAL GATE MOS TYPE (TV TUNER VHF MIXER,VHF RF AMPLIFIER APPLICATIONS) TV TUNER VHF MIXER APPLICATIONS VHF RF AMPLFIFER APPLICATIONS High Converson Gain : GCS = 24.5dB (Typ.) Low Noise Figure : NFCS = 3.3dB( Typ.)	TOSHIBA 东芝	TOSHIBA
3SK274	N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)	TOSHIBA 东芝	TOSHIBA
3SK28	DIFFERENTIAL AMPLIFIER APPLICATIONS Application Medical Electronic Equipment Video Pre-Amplifier VHF Band Amplifier	TOSHIBA 东芝	TOSHIBA
3SK283	N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS	TOSHIBA 东芝	TOSHIBA
3SK284	N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV TUNER, VHF RF AMPLIFIER APPLICATIONS.	TOSHIBA 东芝	TOSHIBA
3SK290	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz • High gain. PG = 19.3 dB Typ. at f = 900 MHz Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK291	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF (typ.) • Low noise figure: NF = 1.5dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK291	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK291	TV TUNER, UHF RF AMPLIFER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance: Crss = 0.016 pF (Typ.) • Low Noise Figure: NF = 1.5dB (Typ.)	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
3SK292	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK292	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance. • Low reverse transfer capacitance: Crss= 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK293	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICAITONS)	TOSHIBA 东芝	TOSHIBA
3SK293	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK294	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
3SK294	N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) TV Tuner, VHF RF Amplifier Application • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.)	TOSHIBA 东芝	TOSHIBA
3SK295	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK295	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK295ZQ-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Application • UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK296	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK296	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK296ZQ-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Application UHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK297	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
3SK297	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS
3SK297ZP-TL-E	Silicon N-Channel Dual Gate MOS FET Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Application UHF / VHF RF amplifier	RENESAS 瑞萨	RENESAS

3SK2产品属性

类型
描述
型号
3SK2
制造商
NEC
制造商全称
NEC
功能描述
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

3SK2供应商更多...

更新时间：2025-12-28 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	3SK253-T2	NEC	24+	NA/	4640	原装现货,当天可交货,原型号开票	询价
深圳市昌和盛利电子有限公司	3SK253-T2	NEC	NEW	SOT143	8293	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市坤融电子科技有限公司	3SK253	NEC	2025+	SOT143	5000	原装进口价格优请找坤融电子!	询价
深圳市一线半导体有限公司	3SK253	NEC	24+	SOT-143SOT-23-4	93000	新进库存/原装	询价
深圳市宇创芯科技有限公司	3SK253	NEC	24+	SOT-143	9600	原装现货,优势供应,支持实单!	询价
深圳市创新迹电子有限公司	3SK253	NEC	22+	SOT143	20000	只做原装	询价
深圳市莱克讯科技有限公司	3SK253/NK425-T2	NEC	1922+	SOT-143	90000	原装进口现货库存专业工厂研究所配单供货	询价
中天科工半导体（深圳）有限公司	3SK253	NEC	25+	SOT143	20300	NEC原装特价3SK253即刻询购立享优惠#长期有货	询价
深圳市盈慧通电子有限公司	3SK253	NEC	2511	SOT143	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市润联芯城科技有限公司	3SK253	NEC	23+	SOT-143	50000	原装正品支持实单	询价

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