丝印代码：3N170；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

丝印代码：3N170；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

N-channel 1700 V, 7 Ohm typ., 2.6 A PowerMESH Power MOSFET in TO-247 long leads package

This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Intrinsic capacitances and Q\ng minimized\nHigh speed switching\n100% avalanche tested;

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-Channel Enhancement Mode MOSFET Switch

FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance

N-CHANNEL MOSFET ENHANCEMENT MODE

FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns

MOSFET SWITCHING

MOSFET SWITCHING N-CHANNEL - ENHANCEMENT

丝印代码：3N170；N-channel 1700 V, 7 廓 typ., 2.6 A PowerMESH??Power MOSFET in a TO-3PF package

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