丝印代码：35N60DM2；Extremely high dv/dt ruggedness

Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.11Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Extremely low gate charge and input capacitance

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Extremely high dv/dt ruggedness

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Extremely high dv/dt ruggedness

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