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型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)

Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)

Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A )

Applications High Frequency DC-DC converters Lead-Free  Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)

Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A )

Applications High Frequency DC-DC converters Lead-Free  Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current

IRF

更新时间:2026-7-29 11:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
26+
TO-220
29971
保证进口原装现货假一赔十
INFINEON/英飞凌
21+
TO-220
5000
只做原装正品
IR/INFINEON
25+
TO-220
5715
只做原装 有挂有货 假一罚十
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRFB31N20DPBF即刻询购立享优惠#长期有货
IR
26+
TO-220
9865
原包原标签100%进口原装可开13%税
IR
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
IR
23+
TO-220
65400
INFINEON/英飞凌
23+
TO-220
5000
进口原装现货
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
Infineon(英飞凌)
25+
ITO-220AB-3
18798
原装正品现货,原厂订货,可支持含税原型号开票。

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