Fast Switching

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N-Channel 100-V (D-S) MOSFET

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电源管理类

丝印代码：30N100；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

丝印代码：30N100；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Halogen-free RDS(ON)

丝印代码：30N10F7；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features  Among the lowest RDS(o

丝印代码：30N100；N-Channel Enhancement Mode Power MOSFET

文件：318.35 Kbytes Page：7 Pages

丝印代码：30N100；N-Channel Enhancement Mode Power MOSFET

文件：332.83 Kbytes Page：7 Pages

丝印代码：30N10F7；N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a DPAK package

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N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ SURFACE-MOUNTING D2PAK

N-Channel Enhancement Mode Power MOSFET

文件：937.47 Kbytes Page：7 Pages

N-Channel Enhancement Mode Power MOSFET

文件：608.79 Kbytes Page：6 Pages

N-Channel Enhancement Mode Power MOSFET

文件：649.21 Kbytes Page：7 Pages