N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ SURFACE-MOUNTING D2PAK

isc N-Channel MOSFET Transistor

• FEATURES • Drain Current :ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 50mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • LED backl

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N-Channel 100-V (D-S) MOSFET

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N-Channel MOSFET uses advanced trench technology

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