丝印代码：30N100；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =30A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

MOSFET

丝印代码：G30T100；Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology

Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCEsat - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat • Designed f

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

N-Type Fixed Attenuator

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Reverse Conducting IGBT with monolithic body diode

文件：370.91 Kbytes Page：12 Pages

Soft Switching Series

文件：330 Kbytes Page：12 Pages