位置：首页 > IC中文资料第11214页 > 30N06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
30N06 | 30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  |   |
30N06 | 60VN-ChannelEnhancementModePowerMOSFET Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | |
30N06 | 60VN-ChannelEnhancementModePowerMOSFET GeneralDescription The30N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | |
30N06 | N-Channel60V(D-S)MOSFET 文件：1.31385 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
30N06 | N-Channel60-V(D-S)MOSFET 文件：896.91 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
30N06 | 30Amps,60VoltsN-CHANNELPOWERMOSFET 文件：223.41 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
30N06 | FastSwitching 文件：64.91 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
30N06 | iscN-ChannelMOSFETTransistor 文件：269.69 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
30N06 | 60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100%RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSupply -SecondarySynchronousRectification •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies, | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies, | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELINSULATEDGATEBIPOLARTRANSISTOR DESCRIPTION TheUTC30N06V-QisalowvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies, | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET 文件：223.41 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：269.69 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：896.91 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
25A竊?0VN-CHANNELMOSFET 文件：130.1 Kbytes Page：5 Pages | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 |  | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：896.9 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：896.9 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：896.87 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-Channel60V(D-S)MOSFET 文件：1.60031 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
30Amps,60VoltsN-CHANNELPOWERMOSFET 文件：223.41 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：337.01 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
60V,30AN-CHANNELPOWERMOSFET 文件：309.86 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
N-CHANNELPOWERMOSFET 文件：336.83 Kbytes Page：8 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
30N06产品属性
- 类型
描述
- 型号
30N06
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
60V, 30A N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XBLW芯伯乐 |
24+ |
TO-252-2L |
50000 |
品牌代理,价格优势,技术支持!!可直接对标进口品牌! |
|||
HARRIS |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
UTC |
25+ |
TO220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
UTC/友顺 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
- |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
CJ/长电 |
24+ |
TO-252 |
8000 |
只做原装，欢迎询价，量大价优 |
|||
NULL |
23+ |
TO-252 |
6000 |
专业优势供应 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UMW |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
UMW(友台半导体) |
23+ |
TO-252-2 |
91815 |
三极管/MOS管/晶体管 > 场效应管(MOSFET) |
30N06芯片相关品牌
30N06规格书下载地址
30N06参数引脚图相关
- 51单片机
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- 5000
- 4921
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- 3579
- 35001
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- 30N15
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- 30N10
- 30N06-TF3-T
- 30N06-TF3-R
- 30N06-TA3-T
- 30N06-TA3-R
- 30N06-Q
- 30N06L-TN3-T
- 30N06L-TF3-T
- 30N06L-TF3-R
- 30N06L-TF2-T
- 30N06L-TA3-T
- 30N06L-TA3-R
- 30N06L
- 30N06G-TN3-T
- 30N06G-TF3-T
- 30N06G-TF2-T
- 30N06G-TA3-T
- 30N06B
- 30N06_11
- 30N06_07
- 30N05
- 30N03B
- 30N03
- 30N02
- 30N
- 30MY10K6X
- 30MRJ-5584-01
- 30MQ040-M3
- 30MPA0562
- 30MIC 3M661X DISC 8
- 30MIC 3M661X DISC 4.125
- 30MIC 3M661X DISC 12
- 30MIC 3M461X TC SHEET 8.5X11
- 30MIC 3M461X LF SC 3MIL TC 5 IN
- 30MIC 3M266X TP SHEET 8.5X11
- 30MIC 3M266X TP DISC 12
- 30MIC 3M266X TP DISC 10
- 30MIC 3M261X SHEET 8.5X11
- 30MIC 3M261X LF AO 3MIL 5 IN
- 30MFA8M-2025
- 30MF-50V-R
- 30MF40R
- 30MF40
- 30MF30R
- 30MF30
- 30MF-15V-R
- 30MF-12V-A
- 30MB1296DU-2D
- 30LVT68
- 30LVT56
- 30LVT47
- 30LVT33
- 30LVT22
- 30LVT15
- 30LVT10
- 30LVS15
- 30LVS10
- 30LVS
- 30LVQ68
- 30LVQ47
30N06数据表相关新闻
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