位置：首页 > IC中文资料第11214页 > 30N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
30N06 | 30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 |   | |
30N06 | 60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 | | |
30N06 | 60V N-Channel Enhancement Mode Power MOSFET General Description The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | |
30N06 | 60V, 30A N-CHANNEL POWER MOSFET | UTC 友顺 | | |
30N06 | 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：223.41 Kbytes Page：8 Pages | UTC 友顺 | | |
30N06 | 60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | | |
30N06 | Fast Switching 文件：64.91 Kbytes Page：2 Pages | ISC 无锡固电 | | |
30N06 | isc N-Channel MOSFET Transistor 文件：269.69 Kbytes Page：2 Pages | ISC 无锡固电 | | |
30N06 | N-Channel 60 V (D-S) MOSFET 文件：1.31385 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
30N06 | N-Channel 6 0-V (D-S) MOSFET 文件：896.91 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | |
N-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
N-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter | VBSEMI 微碧半导体 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, | UTC 友顺 | | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：223.41 Kbytes Page：8 Pages | UTC 友顺 | | ||
60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：269.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：896.91 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
25A竊?0V N-CHANNEL MOSFET 文件：130.1 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 60-V (D-S) MOSFET 文件：896.9 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：896.9 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：896.87 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.60031 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
30 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：223.41 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：336.83 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：337.01 Kbytes Page：8 Pages | UTC 友顺 | | ||
60V, 30A N-CHANNEL POWER MOSFET 文件：309.86 Kbytes Page：8 Pages | UTC 友顺 | |
30N06产品属性
- 类型
描述
- 型号
30N06
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
60V, 30A N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
24+ |
TO-252 |
8000 |
只做原装，欢迎询价，量大价优 |
|||
UTC/友顺 |
24+ |
TO-220 |
60000 |
||||
NK/南科功率 |
9420 |
TO252 |
36520 |
国产南科平替供应大量 |
|||
VBsemi |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价30N06即刻询购立享优惠#长期有货 |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UTC原装 |
23+ |
TO-252-2 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HARRIS |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
UTC(友顺) |
2447 |
TO-252-2(DPAK) |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
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30N06规格书下载地址
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