30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

丝印代码：30N06A；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

丝印代码：30N06A；60V N-Channel Enhancement Mode Power MOSFET

General Description The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

60V, 30A   N-CHANNEL   POWER MOSFET

The UTC 30N06 is a low voltage power MOSFET and is  designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient DC • RDS(ON) = 40mΩ@VGS = 10 V \n• Ultra low gate charge ( typical 20nC )   \n• Low reverse transfer Capacitance ( CRSS = typical 80 pF ) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability;

Fast Switching

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isc N-Channel MOSFET Transistor

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N-Channel 60 V (D-S) MOSFET

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文件：896.91 Kbytes Page：6 Pages

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件：223.41 Kbytes Page：8 Pages

60V, 30A N-CHANNEL POWER MOSFET

文件：309.86 Kbytes Page：8 Pages

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies,

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies,

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies,

60V, 30A N-CHANNEL  POWER MOSFET

The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotiveapplications in power supplies, high efficient • RDS(ON) < 40mΩ@VGS = 10 V, ID=15A \n• Fast switching capability \n• Avalanche energy specified;

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

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60V, 30A N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

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N-Channel 6 0-V (D-S) MOSFET

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25A竊?0V N-CHANNEL MOSFET

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N-CHANNEL POWER MOSFET

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60V, 30A N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

60V, 30A N-CHANNEL POWER MOSFET

文件：309.86 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

60V, 30A N-CHANNEL POWER MOSFET

文件：309.86 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-Channel 60-V (D-S) MOSFET

文件：896.9 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：896.9 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

60V, 30A N-CHANNEL POWER MOSFET

文件：309.86 Kbytes Page：8 Pages

N-Channel 6 0-V (D-S) MOSFET

文件：896.87 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件：223.41 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

60V, 30A N-CHANNEL POWER MOSFET

文件：309.86 Kbytes Page：8 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.60031 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：337.01 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：336.83 Kbytes Page：8 Pages