位置:30N06V-Q > 30N06V-Q详情

30N06V-Q中文资料

厂家型号

30N06V-Q

文件大小

205.67Kbytes

页面数量

6

功能描述

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

数据手册

下载地址一下载地址二到原厂下载

生产厂商

UTC

30N06V-Q数据手册规格书PDF详情

DESCRIPTION

The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.

FEATURES

* RDS(ON) < 40mΩ@VGS = 10 V, ID=15A

* Fast switching capability

* Avalanche energy specified

更新时间:2025-10-12 9:40:00
供应商 型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
24+
TO-220F2
50000
只做原装,欢迎询价,量大价优
UTC/友顺
24+
TO-220F2
50000
全新原装,一手货源,全场热卖!
VBsemi(台湾微碧)
2447
TO-220AB
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
VBSEMI/台湾微碧
23+
TO-252251
50000
全新原装正品现货,支持订货
VBSEMI/台湾微碧
24+
TO-252251
60000
VBsemi
23+
TO252
50000
全新原装正品现货,支持订货
VBsemi
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
INFINEON
TO-252
1000
原装长期供货!