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型号 功能描述 生产厂家 企业 LOGO 操作
30N06L

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

UTC

友顺

30N06L

N-Channel 6 0-V (D-S) MOSFET

文件:896.87 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter

VBSEMI

微碧半导体

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

UTC

友顺

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

UTC

友顺

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

UTC

友顺

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

UTC

友顺

N-CHANNEL POWER MOSFET

文件:337.01 Kbytes Page:8 Pages

UTC

友顺

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件:223.41 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:336.83 Kbytes Page:8 Pages

UTC

友顺

60V, 30A N-CHANNEL POWER MOSFET

文件:309.86 Kbytes Page:8 Pages

UTC

友顺

N-Channel 60 V (D-S) MOSFET

文件:1.60031 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:336.83 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:337.01 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:337.01 Kbytes Page:8 Pages

UTC

友顺

60V, 30A N-CHANNEL POWER MOSFET

文件:309.86 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:336.83 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:336.83 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:337.01 Kbytes Page:8 Pages

UTC

友顺

60V, 30A N-CHANNEL POWER MOSFET

文件:309.86 Kbytes Page:8 Pages

UTC

友顺

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件:223.41 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:337.01 Kbytes Page:8 Pages

UTC

友顺

N-Channel 60 V (D-S) MOSFET

文件:960.11 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:336.83 Kbytes Page:8 Pages

UTC

友顺

N-Channel MOSFET uses advanced trench technology

文件:2.38019 Mbytes Page:5 Pages

DOINGTER

杜因特

N-CHANNEL POWER MOSFET

文件:336.83 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:337.01 Kbytes Page:8 Pages

UTC

友顺

60V, 30A N-CHANNEL POWER MOSFET

文件:309.86 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:337.01 Kbytes Page:8 Pages

UTC

友顺

N-Channel 60-V (D-S) MOSFET

文件:896.91 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:336.83 Kbytes Page:8 Pages

UTC

友顺

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

STMICROELECTRONICS

意法半导体

60V N-Channel MOSFET

文件:663.34 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

60V N-Channel MOSFET

文件:663.34 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

30N06L产品属性

  • 类型

    描述

  • 型号

    30N06L

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    30 Amps, 60 Volts N-CHANNEL POWER MOSFET

更新时间:2026-7-29 14:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi
25+
TO252
9000
只做原装正品 有挂有货 假一赔十
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
UTC/友顺
25+
TO251
55000
UTC/友顺30N06L-TM3-T即刻询购立享优惠#长期有货
VBsemi
21+
TO-220F
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2022+
TO-220
2000
原厂代理 终端免费提供样品
UTC/友顺
26+
TO-220
43600
全新原装现货,假一赔十
VBSEMI/台湾微碧
25+
SOT-252
90000
全新原装现货
VBsemi
23+
TO-220F
50000
全新原装正品现货,支持订货
UTC
25+
TO220
6500
十七年专营原装现货一手货源,样品免费送
26+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择

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