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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3635-Z | SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevoltagerating:±30V •Lowon-stateresistance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SK3635-Z | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevolta | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevolta | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3635isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevoltagerating:±30V •Lowon-stateresistance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features ●Highvoltage:VDSS=200V ●Gatevoltagerating:30V ●Lowon-stateresistance RDS(on)=0.43MAX.(VGS=10V,ID=4.0A) ●LowCiss:Ciss=390pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.43Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.43Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SK3635-Z产品属性
- 类型
描述
- 型号
2SK3635-Z
- 制造商
Renesas Electronics
- 功能描述
Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
23+ |
6000 |
诚信服务，绝对原装原盘 |
||||
Renesas |
21+ |
20 |
全新原装鄙视假货15118075546 |
||||
NEC |
23+ |
NA/ |
26000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
23+ |
TO-252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
2022 |
SOT-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
NEC |
21+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
RENESAS(瑞萨)/IDT |
23+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
NEC/RENES |
SOT252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
NEC |
2024+实力库存 |
TO-252 |
1677 |
只做原厂渠道 可追溯货源 |
|||
NEC |
2021+ |
SOT252 |
80000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
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2SK3635-Z规格书下载地址
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2SK3635-Z数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
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属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
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2020-3-28
DdatasheetPDF页码索引
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