DESCRIPTION

The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

FEATURES

• High voltage: VDSS = 200 V

• Gate voltage rating: ±30 V

• Low on-state resistance

RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)

• Low Ciss: Ciss = 390 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package

• Avalanche capability rated