isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=8A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.43Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate volta

N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance

MOS Field Effect Transistor

Features ● High voltage: VDSS = 200 V ● Gate voltage rating: 30 V ● Low on-state resistance RDS(on) = 0.43 MAX. (VGS = 10 V, ID = 4.0 A) ● Low Ciss: Ciss = 390 pF TYP. ● Built-in gate protection diode