位置：首页 > IC中文资料第1022页 > 2SK3634
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3634 | SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevoltagerating:±30VRDS(on)=0.60Ω | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SK3634 | MOSFieldEffectTransistor Features •Highvoltage:VDSS=200V •Gatevoltagerating:30V RDS(on)=0.60MAX.(VGS=10V,ID=3.0A) •LowCiss:Ciss=270pFTYP.(VDS=10V,VGS=0V) •Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
2SK3634 | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevolta | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SK3634 | N-Channel200V(D-S)MOSFET 文件：963.16 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevolta | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevoltagerating:±30VRDS(on)=0.60Ω | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-Channel200V(D-S)MOSFET 文件：1.64986 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
2SK3634产品属性
- 类型
描述
- 型号
2SK3634
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET N-CH 200V 6A 3-Pin(3+Tab) TO-251
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-251 |
7600 |
全新原装现货 |
|||
VBSEMI台湾微碧 |
23+ |
TO-252 |
22820 |
原装正品，支持实单 |
|||
RENESAS/瑞萨 |
TO252-2 |
265209 |
假一罚十原包原标签常备现货! |
||||
NEC |
23+ |
N-MOSFET/200V/5.3A/RDSO |
4560 |
正迈科技原装现货授权代理主营:IC电容.二三级管原装 |
|||
NEC |
22+ |
TO252 |
25000 |
只有原装绝对原装,支持BOM配单! |
|||
VBSEMI-微碧 |
24+25+/26+27+ |
车规-场效应管 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEC |
23+ |
TO252 |
3000 |
原装正品假一罚百!可开增票! |
|||
NEC |
2023+ |
TO252 |
58000 |
进口原装,现货热卖 |
|||
R |
23+ |
TO-251 |
33500 |
全新原装真实库存含13点增值税票! |
|||
R |
22+ |
TO-251 |
25000 |
只做原装进口现货,专注配单 |
2SK3634芯片相关品牌
2SK3634规格书下载地址
2SK3634参数引脚图相关
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2SK3634数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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