isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate volta

N-Channel MOSFET 200V, 6.0A, 0.65Q

Features | + Vos=200v © os 60A + Reson $0650 @Ves=10V

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 VRDS(on) = 0.60 Ω

MOS Field Effect Transistor

Features • High voltage: VDSS = 200 V • Gate voltage rating: 30 V RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 3.0 A) • Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode

N-Channel 200 V (D-S) MOSFET

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