iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitching characteristics,anddesignedforhighvoltageapplications suchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevolta

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3634isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasDC/DCconverter. FEATURES •Highvoltage:VDSS=200V •Gatevoltagerating:±30VRDS(on)=0.60Ω

MOSFieldEffectTransistor

Features •Highvoltage:VDSS=200V •Gatevoltagerating:30V RDS(on)=0.60MAX.(VGS=10V,ID=3.0A) •LowCiss:Ciss=270pFTYP.(VDS=10V,VGS=0V) •Built-ingateprotectiondiode

N-Channel200V(D-S)MOSFET

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iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC