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型号	功能描述	生产厂家企业	LOGO
2SK3480	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A) • Low Ciss: Ciss = 3600 pF TYP. • B	NEC 瑞萨	NEC
2SK3480	MOS Field Effect Transistor Features ● Super low on-state resistance: RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 25A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 25 A) ● Low Ciss: Ciss = 3600 pF TYP. ● Built-in gate protection diode	KEXIN 科信电子	KEXIN
2SK3480	N-Channel 100-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package	VBSEMI 微碧半导体	VBSEMI
2SK3480	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36mΩ MAX. (VGS = 4.5 V, ID = 25 A) • L	RENESAS 瑞萨	RENESAS
2SK3480-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36mΩ MAX. (VGS = 4.5 V, ID = 25 A) • L	RENESAS 瑞萨	RENESAS
2SK3480-S	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A) • Low Ciss: Ciss = 3600 pF TYP. • B	NEC 瑞萨	NEC
2SK3480-Z	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A) • Low Ciss: Ciss = 3600 pF TYP. • B	NEC 瑞萨	NEC
2SK3480-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36mΩ MAX. (VGS = 4.5 V, ID = 25 A) • L	RENESAS 瑞萨	RENESAS
2SK3480-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36mΩ MAX. (VGS = 4.5 V, ID = 25 A) • L	RENESAS 瑞萨	RENESAS
2SK3480-ZJ	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A) • Low Ciss: Ciss = 3600 pF TYP. • B	NEC 瑞萨	NEC
2SK3481	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L	RENESAS 瑞萨	RENESAS
2SK3481	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. •	NEC 瑞萨	NEC
2SK3481	MOS Field Effect Transistor Features ● Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) ● Low Ciss: Ciss = 2300 pF TYP. ● Built-in gate protection diode	KEXIN 科信电子	KEXIN
2SK3481-S	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. •	NEC 瑞萨	NEC
2SK3481-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L	RENESAS 瑞萨	RENESAS
2SK3481-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L	RENESAS 瑞萨	RENESAS
2SK3481-Z	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. •	NEC 瑞萨	NEC
2SK3481-ZJ	SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. •	NEC 瑞萨	NEC
2SK3481-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L	RENESAS 瑞萨	RENESAS
2SK3482	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ci	RENESAS 瑞萨	RENESAS
2SK3482-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ci	RENESAS 瑞萨	RENESAS
2SK3484	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ci	RENESAS 瑞萨	RENESAS
2SK3484	N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch	VBSEMI 微碧半导体	VBSEMI
2SK3484_V01	N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch	VBSEMI 微碧半导体	VBSEMI
2SK3484-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ci	RENESAS 瑞萨	RENESAS
2SK3480	isc N-Channel MOSFET Transistor 文件：334.06 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3480	N-Channel MOSFET uses advanced trench technology 文件：948.95 Kbytes Page：3 Pages	DOINGTER 杜因特	DOINGTER
2SK3480_15	MOS FIELD EFFECT TRANSISTOR 文件：213.55 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3480-S	isc N-Channel MOSFET Transistor 文件：328.09 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3480-Z	isc N-Channel MOSFET Transistor 文件：402.24 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3480-Z	Nch Single Power Mosfet 100V 50A 31Mohm Mp-25Z/To-220Smd	RENESAS 瑞萨	RENESAS
2SK3480-ZJ	isc N-Channel MOSFET Transistor 文件：402.37 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3481	isc N-Channel MOSFET Transistor 文件：333.54 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3481	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
2SK3481_15	MOS FIELD EFFECT TRANSISTOR 文件：212.39 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3481-S	isc N-Channel MOSFET Transistor 文件：327.56 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3481-Z	isc N-Channel MOSFET Transistor 文件：401.72 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3481-Z	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SK3481-ZJ	isc N-Channel MOSFET Transistor 文件：401.86 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3482	N-Channel 100 V (D-S) MOSFET 文件：1.52206 Mbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3482	MOS Field Effect Transistor 文件：46.94 Kbytes Page：1 Pages	KEXIN 科信电子	KEXIN
2SK3482	SWITCHING N-CHANNEL POWER MOSFET 文件：165.45 Kbytes Page：8 Pages	NEC 瑞萨	NEC
2SK3482	N-Channel MOSFET uses advanced trench technology 文件：1.05095 Mbytes Page：4 Pages	DOINGTER 杜因特	DOINGTER
2SK3482	isc N-Channel MOSFET Transistor 文件：399.62 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3482_15	SWITCHING N-CHANNEL POWER MOS FET 文件：251.05 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3482-Z	SWITCHING N-CHANNEL POWER MOSFET 文件：165.45 Kbytes Page：8 Pages	NEC 瑞萨	NEC
2SK3482-Z	isc N-Channel MOSFET Transistor 文件：332.07 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3483	Old Company Name in Catalogs and Other Documents 文件：253.27 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3483	SWITCHING N-CHANNEL POWER MOSFET 文件：164.85 Kbytes Page：8 Pages	NEC 瑞萨	NEC
2SK3483	MOS Field Effect Transistor 文件：46.61 Kbytes Page：1 Pages	KEXIN 科信电子	KEXIN
2SK3483	isc N-Channel MOSFET Transistor 文件：399.47 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3483_15	SWITCHING N-CHANNEL POWER MOS FET 文件：253.27 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3483-Z	isc N-Channel MOSFET Transistor 文件：331.92 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3483-Z	SWITCHING N-CHANNEL POWER MOSFET 文件：164.85 Kbytes Page：8 Pages	NEC 瑞萨	NEC
2SK3483-Z-E1-AZ	N-Channel 100-V (D-S) MOSFET 文件：984.2 Kbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3483-ZK	isc N-Channel MOSFET Transistor 文件：402.04 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3484	P-Channel 30 V (D-S) MOSFET 文件：1.02284 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3484	isc N-Channel MOSFET Transistor 文件：399.2 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3484	SWITCHING N-CHANNEL POWER MOSFET 文件：144.92 Kbytes Page：8 Pages	NEC 瑞萨	NEC
2SK3484	MOS Field Effect Transistor 文件：46.79 Kbytes Page：1 Pages	KEXIN 科信电子	KEXIN

2SK348产品属性

类型
描述
型号
2SK348
制造商
Renesas Electronics Corporation

2SK348供应商更多...

更新时间：2025-12-25 9:07:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
现代芯城（深圳）科技有限公司	2SK3480-S12-AZ		24+	N/A	60000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市勤思达科技有限公司	2SK3480(0)-Z-E1-AZ	RENESAS	24+	TO-263	5000	全新原装正品,现货销售	询价
中天科工半导体（深圳）有限公司	2SK3480	RENESAS/瑞萨	25+	TO220F	20300	RENESAS/瑞萨原装特价2SK3480即刻询购立享优惠#长期有货	询价
深圳市博中泰实业有限公司	2SK3480	RENESAS/瑞萨	24+	TO220	60000		询价
深圳市俊晖半导体有限公司	2SK3480(0)-Z-E1-AZ	RENESAS	25+	SO-263	8800	公司只做原装,详情请咨询	询价
深圳市宇创芯科技有限公司	2SK3480(0)-Z-E1-AZ	RENESAS	24+	SO-263	16900	原装正品现货支持实单	询价
深圳市昌和盛利电子有限公司	2SK3480	NEC	NEW	TO-220	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市亿智腾科技有限公司	2SK3480-Z	NEC	24+		6540	原装现货/欢迎来电咨询	询价
深圳市豪迈兴电子有限公司	2SK3480-Z	NEC	24+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市中飞凌科技有限公司	2SK3480(0)-Z-E1-AZ	RENESAS	26+	SO-263	360000	进口原装现货	询价

2SK348芯片相关品牌

2SK348规格书下载地址

2SK348参数引脚图相关

2SK348数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK348产品属性

2SK348供应商更多...

2SK348芯片相关品牌

2SK348规格书下载地址

2SK348参数引脚图相关

2SK348数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引