位置：首页 > IC中文资料第1569页 > 2SK3481
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3481 | SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • | NEC 瑞萨 |   | |
2SK3481 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L | RENESAS 瑞萨 | | |
2SK3481 | MOS Field Effect Transistor Features ● Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) ● Low Ciss: Ciss = 2300 pF TYP. ● Built-in gate protection diode | KEXIN 科信电子 | | |
2SK3481 | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
2SK3481 | isc N-Channel MOSFET Transistor 文件：333.54 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58mΩ MAX. (VGS = 4.5 V, ID = 15 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：212.39 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：327.56 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：401.72 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：401.86 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3481产品属性
- 类型
描述
- 型号
2SK3481
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Renesas |
21+ |
2055 |
全新原装鄙视假货 |
||||
NEC |
24+ |
TO-220AB |
8866 |
||||
NEC |
24+ |
NA/ |
132 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
23+ |
TO-220F |
1500 |
专做原装正品,假一罚百! |
|||
RENESAS/瑞萨 |
25+ |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
NEC |
06+ |
TO-220 |
39 |
只做原装正品 |
|||
RENESAS/瑞萨 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2SK3481芯片相关品牌
2SK3481规格书下载地址
2SK3481参数引脚图相关
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2SK3481数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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