型号 功能描述 生产厂家 企业 LOGO 操作
2SK345

isc N-Channel MOSFET Transistor

文件:332.63 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

1. Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2. Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 0.72 Ω(typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 700 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 0.63 Ω MAX. (VG

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3455 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG= 30 nC TYP

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3455 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 30 nC TYP.

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3455B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 30 nC

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3455B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 30 nC

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3456 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 30 nC TYP.

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low gate charge QG= 30 nC TYP. (VDD= 400 V, VGS=10V,ID=12A) Gate voltage rating 30 V Low on-state resistance RDS(on)=0.60 MAX. (VGS=10V,ID=6.0A) Avalanche capability ratings Surface mount package available

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3456 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG= 30 nC TYP. (VDD= 400 V, VGS= 10 V, ID= 12 A) •Gat

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3456 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG= 30 nC TYP. (VDD= 400 V, VGS= 10 V, ID= 12 A) •Gat

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3456 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 30 nC TYP.

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3456 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 30 nC TYP.

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3456 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG= 30 nC TYP. (VDD= 400 V, VGS= 10 V, ID= 12 A) •Gat

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 24 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A) • Gate volta

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 24 nC TYP. (VDD = 450

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

NEC

瑞萨

MOS Field Effect Transistor

Features ● Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) ● Gate voltage rating 30 V ● Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) ● Avalanche capability ratings ● Surface mount package available

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:332.33 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

文件:108.08 Kbytes Page:4 Pages

Fuji

富士通

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

文件:107.78 Kbytes Page:4 Pages

Fuji

富士通

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:324.39 Kbytes Page:2 Pages

ISC

无锡固电

功率MOSFET 600V-700V

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:331 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

TOSHIBA

东芝

Silicon N Channel MOS Type Switching Regulator Applications

文件:190.09 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:185.41 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Switching Regulator Applications

文件:190.09 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:185.41 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:323.3 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:323.03 Kbytes Page:2 Pages

ISC

无锡固电

2SK345产品属性

  • 类型

    描述

  • 型号

    2SK345

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJITSU/富士通
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
FUJITSU
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
NEC
23+
TO-220
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
FUJITSU/富士通
25+
TO-20-20F
45000
FUJITSU/富士通全新现货2SK3451即刻询购立享优惠#长期有排单订
HITACHI/日立
24+
TO 220
158220
明嘉莱只做原装正品现货
FUJI/富士电机
23+
N/A
11550
FUJI/富士电机系列在售
FUJI
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
RENESAS
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
FUJI
23+
TO-220
4000
专做原装正品,假一罚百!

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