DESCRIPTION

The 2SK3458 is N-channel DMOS FET device that features a

low gate charge and excellent switching characteristics,

designed for high voltage applications such as switching power

supply.

FEATURES

• Low gate charge

QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)

• Gate voltage rating ±30 V

• Low on-state resistance

RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)

• Avalanche capability ratings

• Surface mount package available