位置：首页 > IC中文资料第5788页 > 2SK3458
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3458 | SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r | NEC 瑞萨 |   | |
2SK3458 | MOS Field Effect Transistor Features ● Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) ● Gate voltage rating 30 V ● Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) ● Avalanche capability ratings ● Surface mount package available | KEXIN 科信电子 | | |
2SK3458 | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol | RENESAS 瑞萨 | | |
2SK3458 | SWITCHING N-CHANNEL POWER MOSFET | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate vol | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage r | NEC 瑞萨 | |
2SK3458产品属性
- 类型
描述
- 型号
2SK3458
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
4430 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
NEW |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
24+ |
TO-263 |
8866 |
||||
NEC |
25+ |
TO-263 |
1180 |
全新原装正品支持含税 |
|||
NEC |
25+ |
SOT-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEC |
1922+ |
SOT263 |
3000 |
绝对进口原装现货 |
|||
NEC |
17+ |
TO-262 |
31518 |
原装正品 可含税交易 |
|||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
||||
NEC |
24+ |
TO-263 |
60000 |
全新原装现货 |
2SK3458芯片相关品牌
2SK3458规格书下载地址
2SK3458参数引脚图相关
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2SK3458数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
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2020-3-282SK3591-01R
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2020-3-28
DdatasheetPDF页码索引
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