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型号 功能描述 生产厂家 企业 LOGO 操作
2SK3430

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

NEC

瑞萨

2SK3430

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3430

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) ● Low Ciss: Ciss = 2800 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3430-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3430-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

NEC

瑞萨

2SK3430-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

NEC

瑞萨

2SK3430-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3430-Z

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

ISC

无锡固电

2SK3430-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3430-ZJ

N-Channel MOSFET

■ Features ● VDS S = 40V ● ID = 80 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

2SK3431

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1=5.6mΩ MAX. (VGS=10V,ID=42A) RDS(on)2=8.9mΩ MAX. (VGS=4V,ID=42A) ● Low Ciss:Ciss = 6100 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3431

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3431

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

NEC

瑞萨

2SK3431-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

NEC

瑞萨

2SK3431-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3431-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3431-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 8.9 mΩMAX. (VGS= 4 V, ID= 42 A) • Low Ciss: Ciss= 6100 pF TY

NEC

瑞萨

2SK3431-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.6mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3432

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3432

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui

NEC

瑞萨

2SK3432

MOS Field Effect Transistor

Features Super low on-state resistance: RDS(on)1=4.0mΩ MAX. (VGS=10V,ID=42A) RDS(on)2=6.9mΩ MAX. (VGS=4V,ID=42A) Low Ciss:Ciss = 9500 pF TYP. Built-in gate protection diode

KEXIN

科信电子

2SK3432-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui

NEC

瑞萨

2SK3432-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3432-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3432-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui

NEC

瑞萨

2SK3432-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L

RENESAS

瑞萨

2SK3433

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A) • L

RENESAS

瑞萨

2SK3433

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 26 mΩ MAX. (VGS= 10 V, ID= 20 A) RDS(on)2= 41 mΩ MAX. (VGS= 4.0 V, ID= 20 A) • Low Ciss: Ciss= 1500 pF TYP. • Built-in

NEC

瑞萨

2SK3433

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 41 m MAX. (VGS = 4 V, ID = 42 A) ● Low Ciss: Ciss =1500 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3433-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 26 mΩ MAX. (VGS= 10 V, ID= 20 A) RDS(on)2= 41 mΩ MAX. (VGS= 4.0 V, ID= 20 A) • Low Ciss: Ciss= 1500 pF TYP. • Built-in

NEC

瑞萨

2SK3433-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A) • L

RENESAS

瑞萨

2SK3433-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A) • L

RENESAS

瑞萨

2SK3433-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 26 mΩ MAX. (VGS= 10 V, ID= 20 A) RDS(on)2= 41 mΩ MAX. (VGS= 4.0 V, ID= 20 A) • Low Ciss: Ciss= 1500 pF TYP. • Built-in

NEC

瑞萨

2SK3433-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 41mΩ MAX. (VGS = 4.0 V, ID = 20 A) • L

RENESAS

瑞萨

2SK3434

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

RENESAS

瑞萨

2SK3434

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g

NEC

瑞萨

2SK3434

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1= 20mΩ MAX. (VGS=10V,ID= 24A) RDS(on)2=31mΩ MAX. (VGS=4V,ID= 24A) ● Low Ciss: Ciss =2100 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3434-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g

NEC

瑞萨

2SK3434-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

RENESAS

瑞萨

2SK3434-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

RENESAS

瑞萨

2SK3434-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g

NEC

瑞萨

2SK3434-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo

RENESAS

瑞萨

2SK3434-ZJ

N-Channel MOSFET

■ Features ● VDS S = 60V ● ID = 48 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

2SK3435

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

VBSEMI

微碧半导体

2SK3435

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A) RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A) ● Low Ciss: Ciss =3200 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

2SK3435

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3435

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. Official Site : http://www.renesas.eu/products/discrete/pmosfet/gen_sw/device/2SK3435-Z.jsp

NEC

瑞萨

2SK3435-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. Official Site : http://www.renesas.eu/products/discrete/pmosfet/gen_sw/device/2SK3435-Z.jsp

NEC

瑞萨

2SK3435-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3435-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3435-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. Official Site : http://www.renesas.eu/products/discrete/pmosfet/gen_sw/device/2SK3435-Z.jsp

NEC

瑞萨

2SK3435-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Lo

RENESAS

瑞萨

2SK3437

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3437

DC-DC Converter, Relay Drive and Motor Drive Applications

DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON)= 0.74 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 3.0 to 5.0 V (VDS= 10 V, ID= 1 m

TOSHIBA

东芝

2SK3438

Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications

DC-DC Converter, Relay Drive and Motor DriveApplications • Low drain-source ON resistance: RDS (ON)= 0.74 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 3.0~5.0 V (VDS= 10 V, ID= 1 m

TOSHIBA

东芝

2SK3438

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3439

DC-DC Converter Relay Drive and Motor Drive Applications

DC-DC Converter Applications Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON)= 3.8 mΩ(typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS= 30 V) • Enhancement mode: Vth= 1.3 to 2.5 V (

TOSHIBA

东芝

2SK3430

isc N-Channel MOSFET Transistor

文件：332.61 Kbytes Page：2 Pages

ISC

无锡固电

2SK3430

N-Channel MOSFET uses advanced trench technology

文件：1.32541 Mbytes Page：5 Pages

DOINGTER

杜因特

2SK3430_15

MOS FIELD EFFECT TRANSISTOR

文件：223.35 Kbytes Page：10 Pages

RENESAS

瑞萨

2SK343产品属性

  • 类型

    描述

  • 型号

    2SK343

  • 制造商

    KEXIN

  • 制造商全称

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述

    MOS Field Effect Transistor

2SK343供应商更多...

更新时间：2025-12-25 16:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市昌和盛利电子有限公司
2SK3435-S
NEC
NEW
T0-262
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市明嘉莱科技有限公司
2SK3435-Z-AZ
RENESAS/瑞萨
25+
NA
860000
明嘉莱只做原装正品现货
询价
深圳诚思涵科技有限公司
2SK3438
TOSHIBA
18+
SC97
85600
保证进口原装可开17%增值税发票
询价
深圳市纳立科技有限公司
2SK3436-TL-E
三年内
1983
只做原装正品
询价
深圳市安富世纪电子有限公司
2SK3435-Z
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
询价
艾睿（深圳）半导体有限公司
2SK3438(TE24L)
TOSHIBA/东芝
2447
SC97
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
贸泽芯城（深圳）电子科技有限公司
2SK3435-Z
NEC
23+
TO-263
90000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市宇创芯科技有限公司
2SK3435-Z-E1-AZ
RENESAS
24+
TO-263
16900
原装正品现货支持实单
询价
深圳市一线半导体有限公司
2SK3435-S
NEC
24+
TO-262
8866
询价
深圳市莱克讯科技有限公司
2SK3438
TOSHIBA/东芝
1922+
NA
9200
公司原装现货假一罚十特价欢迎来电咨询
询价

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    2023-2-16

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    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package

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