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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3434-Z | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g | NEC 瑞萨 |   | |
2SK3434-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo | RENESAS 瑞萨 | | |
2SK3434-Z | isc N-Channel MOSFET Transistor 文件：401.61 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK3434-Z | Power MOSFETs | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g | NEC 瑞萨 | | ||
MOS Field Effect Transistor Features ● Super low on-state resistance: RDS(on)1= 20mΩ MAX. (VGS=10V,ID= 24A) RDS(on)2=31mΩ MAX. (VGS=4V,ID= 24A) ● Low Ciss: Ciss =2100 pF TYP. ● Built-in gate protection diode | KEXIN 科信电子 | | ||
isc N-Channel MOSFET Transistor 文件：333.44 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Lo | RENESAS 瑞萨 | | ||
N-Channel MOSFET ■ Features ● VDS S = 60V ● ID = 48 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 24 A) RDS(on)2= 31 mΩMAX. (VGS= 4.0 V, ID= 24 A) • Low Ciss: Ciss= 2100 pF TYP. • Built-in g | NEC 瑞萨 | |
2SK3434-Z产品属性
- 类型
描述
- 型号
2SK3434-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
150 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
23+ |
TO-220 |
15000 |
专做原装正品,假一罚百! |
|||
NEC |
NEW |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
NEC |
25+23+ |
TO-220 |
24409 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
2000000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
12+ |
TO-220 |
2500 |
原装现货/特价 |
|||
NEC |
24+ |
TO-263 |
8866 |
||||
NEC |
24+ |
TO-220 |
43200 |
郑重承诺只做原装进口现货 |
|||
NEC |
17+ |
TO-220 |
6200 |
2SK3434-Z芯片相关品牌
2SK3434-Z规格书下载地址
2SK3434-Z参数引脚图相关
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2SK3434-Z数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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