位置：首页 > IC中文资料第12132页 > 2SK3432
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3432 | MOS Field Effect Transistor Features Super low on-state resistance: RDS(on)1=4.0mΩ MAX. (VGS=10V,ID=42A) RDS(on)2=6.9mΩ MAX. (VGS=4V,ID=42A) Low Ciss:Ciss = 9500 pF TYP. Built-in gate protection diode | KEXIN 科信电子 |   | |
2SK3432 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L | RENESAS 瑞萨 | | |
2SK3432 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui | NEC 瑞萨 | | |
2SK3432 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.9 mΩMAX. (VGS= 4 V, ID= 42 A) •Low Ciss: Ciss= 9500 pF TYP. •Bui | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9mΩ MAX. (VGS = 4 V, ID = 42 A) • L | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | |
2SK3432产品属性
- 类型
描述
- 型号
2SK3432
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
1336+/1250+ |
SOT-263 |
45 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
RENESAS |
2023+ |
SOT-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
26+ |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
|||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
||||
NEC |
24+ |
TO263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
RENESAS |
23+ |
SOT-263 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
TO-263 |
110000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SK3432规格书下载地址
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2SK3432数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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