2SK34

2SK34 / TO 92 Package

TRANSISTOR

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2SK34

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A) • Low Ci

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)1 =15 mΩ MAX. (VGS = 10 V, ID = 18A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18A) ● Low Ciss : Ciss = 3200 pF TYP. ● Built-in gate protection diode

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A) • Low Ciss : Ciss = 3200 pF TYP. • Built

N-Channel MOSFET

■ Features ● VDS S = 60V ● ID = 36 A (VGS = 10V) ● RDS(ON)

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A) • Low Ciss : Ciss = 3200 pF TYP. • Built

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A) • Low Ci

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

MOS Field Effect Transistor

Features ● 4.5-V drive available ● Low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 20 A) ● Low gate charge QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V) ● Built-in gate protection diode ● Surface mount device available

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5-V drive available • Low on-state

MOS Field Effect Transistor

MOS Field Effect Transistor Features 4.5-V drive available Low on-state resistance RDS(on)1=9.0m MAX. (VGS=10V,ID=24A) Low gate charge QG= 34 nC TYP. (ID=48A,VDD= 16V, VGS=10V) Built-in gate protection diode Surface mount device available

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5-V drive available • Low on-state

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5-V drive available • Low on-state

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4.0 V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. FEATURES • Can

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4-V power source. ​​​​​​​The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. FEATURES •

DC / DC Converter Applications

• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • 4V drive.

DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • 4V drive.

DC / DC Converter, Motor Driver Applications

Features • Low ON-resistance. • 4V drive.

2SK3416

DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switcing. • 4V drive.

Switching Regulator Applications

Switching Regulator Applications • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enha

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SK3418

FEATURES • Low on-resistance RDS (on) = 4.3mΩ typ. • Low voltage drive (4V drive) • The switching speed is fast.

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching

MOS Field Effect Transistor

Features ● 4.5-V drive available ● Low on-state resistance RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A) ● Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24V, VGS = 10 V) ● Built-in gate protection diode ● Surface mount device available

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

N-Channel MOSFET

■ Features ● VDS S = 30V ● ID = 48 A (VGS = 10V) ● RDS(ON)

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

MOS Field Effect Transistor

Features ● Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) ● Low Ciss: Ciss = 2800 pF TYP. ● Built-in gate protection diode

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Low Ciss: Ciss = 2800 pF TYP. • Bu

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

N-Channel MOSFET

■ Features ● VDS S = 40V ● ID = 80 A (VGS = 10V) ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 7.3mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15mΩ MAX. (VGS = 4 V, ID = 40 A) • Lo