SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3424 is N-Channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 11.5 mΩ MAX. (VGS = 10 V, ID = 24 A)

• Low gate charge

QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)

• Built-in gate protection diode

• Surface mount device available