JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) • Includes diode and high

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3230 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230B is suitable for converter of ECM. General-purpose product. FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3230B is suitable for converter of ECM. General-purpose product. FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Small package: SC-89 (TUSM)

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact package and low noise, the

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 1.1 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) • Avalanche ratings

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS(on)= 1.1 Ωtyp. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) • Avalanche ratings

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 1.1 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) • Avalanche ratings

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 0.65 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) • Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A) • Avalanche ratings

2SK3234

Features • Low on-resistance: RDS (on) = 0.65 Ω typ. • Low drain blocking current: IDSS = 1 μA max (at VDS = 500 V) • Fast switching speed: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) • Low input dynamic capacity (Qg): Qg = 25 nC typ (VDD = 400 V, VGS = 10 V, ID = 8 A) • Avalanche W

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 0.65 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A) • Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A) • Avalanche ratings

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

Switching Regulator Applications, DC-DC Converter and Motor Drive Applications 1. 4-V gate drive 2. Low drain-source ON resistance: RDS (ON)= 13.5 mΩ(typ.) 3. High forward transfer admittance: |Yfs| = 42 S (typ.) 4. Low leakage current: IDSS= 100 μA (max) (VDS= 60 V) 5. Enhanc

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

N-CHANNEL SILICON J-FET

JUNCTION FIELD EFFECT TRANSISTOR

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N-channel MOSFET high speed power switching, 500V, 5A

Power MOSFETs

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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

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isc N-Channel MOSFET Transistor

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Switching Regulator Applications, DC-DC Converter and

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Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

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Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

文件：187.98 Kbytes Page：6 Pages

Switching Regulator Applications, DC-DC Converter and

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