Features

• Low on-resistance: RDS (on) = 0.65 Ω typ.

• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)

• High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)

• Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A)

• Avalanche ratings