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2SK321价格

参考价格：￥1.9500

型号：2SK3210 品牌：RENESAS 备注：这里有2SK321多少钱，2025年最近7天走势，今日出价，今日竞价，2SK321批发/采购报价，2SK321行情走势销售排行榜，2SK321报价。

型号	功能描述	生产厂家企业	LOGO
2SK321	SI N-CHANNEL JUNCTION Wide-Band, Low-Noise Amplifier Video Camera	Panasonic 松下	Panasonic
2SK3210	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3210	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 40 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3210L	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3210L	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 40 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3210S	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3210STL	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 40 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3211	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3211	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3211	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T	RENESAS 瑞萨	RENESAS
2SK3211L	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3211L-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3211S	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3211S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh	ISC 无锡固电	ISC
2SK3211STL-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3212	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3212	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3212-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3214	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3214	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3214-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3215	Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS=350mΩtyp. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3216-01	N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3218-01	N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3219-01MR	N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK3210(L)_15	Silicon N Channel MOS FET High Speed Power Switching 文件：170.96 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
2SK3210L	isc N-Channel MOSFET Transistor 文件：327.31 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3210L	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SK3210S	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SK3210S	isc N-Channel MOSFET Transistor 文件：401.18 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3211(L)_15	Silicon N Channel MOS FET 文件：115.03 Kbytes Page：11 Pages	RENESAS 瑞萨	RENESAS
2SK3211L	N-Channel 200V (D-S) MOSFET 文件：915.8 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3211L	isc N-Channel MOSFET Transistor 文件：327.21 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3211L	Silicon N Channel MOS FET High Speed Power Switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3211S	isc N-Channel MOSFET Transistor 文件：401.08 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3212	isc N-Channel MOSFET Transistor 文件：324.08 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3212_15	Silicon N Channel MOS FET High Speed Power Switching 文件：110.33 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3214	isc N-Channel MOSFET Transistor 文件：333.4 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3215	isc N-Channel MOSFET Transistor 文件：333.41 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3216	isc N-Channel MOSFET Transistor 文件：332.98 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3217	isc N-Channel MOSFET Transistor 文件：323.73 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3218	isc N-Channel MOSFET Transistor 文件：333.09 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3219	isc N-Channel MOSFET Transistor 文件：323.83 Kbytes Page：2 Pages	ISC 无锡固电	ISC

2SK321产品属性

类型
描述
型号
2SK321
制造商
PANASONIC
制造商全称
Panasonic Semiconductor
功能描述
SI N-CHANNEL JUNCTION

2SK321供应商更多...

更新时间：2025-11-22 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SK3210	Renesas(瑞萨)	24+	标准封装	8398	支持大陆交货,美金交易。原装现货库存。	询价
深圳市得捷芯城科技有限公司	2SK3210	Renesas(瑞萨)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市金芯世纪电子有限公司	2SK3211S	RENESAS/瑞萨	22+	TO-263	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	2SK321	RENESAS/瑞萨	23+	SOT-23	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市威雅利发展有限公司	2SK3211-90STR-E	RENESAS	0725+25/200	TO-263	4939	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市明嘉莱科技有限公司	2SK3212	HITACHI/日立	24+	TO 220	158228	明嘉莱只做原装正品现货	询价
深圳市华睿芯科技有限公司	2SK3210STL-E	RENESAS	24+	TO263	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
贸泽芯城（深圳）电子科技有限公司	2SK321-Q	PANASONIC/松下	23+	SOT-23	30700	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
中天科工半导体（深圳）有限公司	2SK3217	FUJITSU/富士通	25+	TO-220F/220	45000	FUJITSU/富士通全新现货2SK3217即刻询购立享优惠#长期有排单订	询价
深圳市振宏微科技有限公司	2SK321-R	SOT-23	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价

2SK321芯片相关品牌

2SK321规格书下载地址

2SK321参数引脚图相关

2SK321数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-27
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK321价格

2SK321产品属性

2SK321供应商更多...

2SK321芯片相关品牌

2SK321规格书下载地址

2SK321参数引脚图相关

2SK321数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引