Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Silicon N Channel MOS FET

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N-Channel 200V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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Silicon N Channel MOS FET High Speed Power Switching

Power MOSFETs

isc N-Channel MOSFET Transistor

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