| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3211 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK3211 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | |
2SK3211 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T | RENESAS 瑞萨 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance\n RDS = 60 mΩ typ.\n• High speed switching\n• 4 V gate drive device can be driven from 5 V source ; | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET 文件：115.03 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
N-Channel 200V (D-S) MOSFET 文件：915.8 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：327.21 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：401.08 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3211产品属性
- 类型
描述
- 封装类型：
LDPAK(S)-(1)/TO-263
- Nch/Pch：
Nch
- 通道数：
Single
- 配置[器件]：
Built-In SBD
- VDSS (V) 最大值：
200
- ID (A)：
25
- RDS (ON)(mΩ) 最大值@4V或4.5V：
85
- RDS (ON)(mΩ) 最大值@10V或8V：
75
- Ciss (pF) 典型值：
2420
- Vgs (off) (V) 最大值：
2.5
- VGSS (V)：
20
- Pch (W)：
100
- 应用：
Industrial
- 安装类型：
Surface Mount
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
12245 |
现货,原厂原装假一罚十! |
|||
reNESAS |
24+ |
60000 |
|||||
RENESAS/瑞萨 |
25+ |
TO-263 |
32360 |
RENESAS/瑞萨全新特价2SK3211-90STR-E即刻询购立享优惠#长期有货 |
|||
RENESAS |
0725+25/200 |
TO-263 |
4939 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
瑞萨进口 |
26+ |
TO-263 |
60000 |
只有原装,可配单 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
瑞萨原装进口 |
25+ |
TO-263 |
30000 |
代理全新原装现货,价格优势 |
|||
瑞萨原装进口 |
22+ |
TO-263 |
20000 |
公司只有原装 品质保证 |
|||
瑞萨进口 |
25+ |
TO-263 |
90000 |
全新原装现货 |
|||
RENESAS |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
2SK3211芯片相关品牌
2SK3211规格书下载地址
2SK3211参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SK3271
- 2SK3269
- 2SK3268
- 2SK3265
- 2SK3262
- 2SK324
- 2SK3236
- 2SK3235
- 2SK3234
- 2SK3233
- 2SK3230
- 2SK3229
- 2SK3228
- 2SK3225
- 2SK3224
- 2SK3221
- 2SK322
- 2SK3219-01MRSC
- 2SK3219-01MR
- 2SK3218-01SC
- 2SK3218-01
- 2SK3217-01MRSC
- 2SK3217-01MR
- 2SK3216-01SC
- 2SK3216-01
- 2SK321601
- 2SK3215
- 2SK3214
- 2SK3212-E
- 2SK3212
- 2SK3211STL-E
- 2SK3211S
- 2SK3211L-E
- 2SK3211L
- 2SK3211(S)
- 2SK3211(L)|2SK3211(S)
- 2SK3211(L)
- 2SK3210STL
- 2SK3210S-E
- 2SK3210S
- 2SK3210L
- 2SK3210(L)|2SK3210(S)
- 2SK3210
- 2SK321
- 2SK3209-E
- 2SK3209
- 2SK3207
- 2SK3205_06
- 2SK3205(TE16L1,NQ)
- 2SK3205(T6L1HIUO,N
- 2SK3205(T6L1HITJNQ
- 2SK3205(Q)
- 2SK3205
- 2SK3204
- 2SK3203(L).2SK3203(S)
- 2SK3200
- 2SK320
- 2SK3199
- 2SK3192
- 2SK319
- 2SK3179
- 2SK3177
- 2SK3176
- 2SK3163
- 2SK3162
- 2SK3161
- 2SK3160
- 2SK316
- 2SK3159
- 2SK3158
2SK3211数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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