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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3211L | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK3211L | N-Channel 200V (D-S) MOSFET 文件：915.8 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | |
2SK3211L | isc N-Channel MOSFET Transistor 文件：327.21 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK3211L | Silicon N Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET 文件：115.03 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SK3211L产品属性
- 类型
描述
- 型号
2SK3211L
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
276 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
23+ |
LDPAK(S)-(1)TO-263 |
2000000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
VBSEMI/微碧半导体 |
24+ |
TO220F |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
FUJI |
24+ |
TO-220 |
1000 |
||||
Renesas |
17+ |
TO-220FM |
6200 |
||||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
FUJI |
NEW |
TO-220 |
9516 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
日立 |
24+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
2SK3211L规格书下载地址
2SK3211L参数引脚图相关
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2SK3211L数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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