| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3062-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID | RENESAS 瑞萨 |   | |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
4235 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
07+ |
SOT-263 |
985 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC/松下 |
2450+ |
S3-G1 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
PANASONIC/松下 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
NEC |
2023+ |
TO-263 |
50000 |
原装现货 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
24+ |
TO-263 |
36800 |
||||
PANASONIC/松下 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
23+ |
TO263 |
57610 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
PANASONIC |
1922+ |
SOT-323 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
2SK3062-Z规格书下载地址
2SK3062-Z参数引脚图相关
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2SK3062-Z数据表相关新闻
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2019-11-14
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