2SK291价格

参考价格:¥0.4550

型号:2SK2910 品牌:SANYO 备注:这里有2SK291多少钱,2025年最近7天走势,今日出价,今日竞价,2SK291批发/采购报价,2SK291行情走势销售排行榜,2SK291报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK291

Silicon N-Channel Junction FET

Application Low frequency low noise amplifier

HitachiHitachi Semiconductor

日立日立公司

2SK291

TV TUNER, UHF RF AMPLIFIER APPLICATIONS

文件:148.61 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SK291

Silicon N-Channel Junction FET

HitachiHitachi Semiconductor

日立日立公司

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

SANYO

三洋

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Moter Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) ● High forward transfer admittance : |Yfs| = 7.5 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, I

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.31 Ω (typ.) ● High forward transfer admittance : |Yfs| = 15 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications ● Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) ● High forward transfer admittance : |Yfs| = 11 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

• FEATURES • With TO-3PN packaging • High speed switching • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applications

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain–source ON resistance : RDS (ON) = 0.21 Ω (typ.) ● High forward transfer admittance : |Yfs| = 17 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

TOSHIBA

东芝

Power MOSFET

N-channel enhancement mode power MOSFET / TO-220

Fuji

富士通

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns).

SANYO

三洋

Silicon N Channel MOS FET High Speed Power Switching

HitachiHitachi Semiconductor

日立日立公司

Power switching MOSFET

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

文件:325.97 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:399.83 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:332.28 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Moter Drive Applications

文件:661.2 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Moter Drive Applications

文件:410.43 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Moter Drive Applications

文件:661.2 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Moter Drive Applications

文件:410.43 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type opper Regulator, DC−DC Converter and Motor Drive Applications

文件:747.4 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:330.44 Kbytes Page:2 Pages

ISC

无锡固电

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:441.04 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type opper Regulator, DC−DC Converter and Motor Drive Applications

文件:747.4 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:441.04 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

文件:714.88 Kbytes Page:6 Pages

TOSHIBA

东芝

DC−DC Converter, Relay Drive and Motor Drive Applications

文件:420.94 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:330.64 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

文件:714.88 Kbytes Page:6 Pages

TOSHIBA

东芝

DC−DC Converter, Relay Drive and Motor Drive Applications

文件:420.94 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:431.82 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:781.34 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:781.34 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:431.82 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:330.91 Kbytes Page:2 Pages

ISC

无锡固电

2SK291产品属性

  • 类型

    描述

  • 型号

    2SK291

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
3275
原装现货,当天可交货,原型号开票
TOSHIBA
2016+
TO-3P
2980
公司只做原装,假一罚十,可开17%增值税发票!
TOSHIBA/东芝
25+
TO-220
45000
TOSHIBA/东芝全新现货2SK2914即刻询购立享优惠#长期有排单订
HITACHI/日立
24+
TO 262 263
158467
明嘉莱只做原装正品现货
TOSHIBA
24+/25+
684
原装正品现货库存价优
TOSHIBA
24+
TO-3P(N)
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
SANYO
SOT-23
15000
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOSHIBA
NEW
TO-3P
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百

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