位置：首页 > IC中文资料第512页 > 2SK2912S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2912S | Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK2912S | Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | |
2SK2912S | isc N-Channel MOSFET Transistor 文件：399.83 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK2912S | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 15 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：325.97 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK2912S产品属性
- 类型
描述
- 型号
2SK2912S
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
1922+ |
SOT263 |
2000 |
公司原装现货特价处理 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
25800 |
原装正品支持实单 |
|||
reNESAS |
24+ |
30000 |
|||||
TOSHIBA |
24+/25+ |
897 |
原装正品现货库存价优 |
||||
TOSHIBA/东芝 |
24+ |
NA/ |
3675 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
恩XP |
23+ |
TO-126 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
TOSHIBA/假货赔房 |
7 |
TO220 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
2SK2912S芯片相关品牌
2SK2912S规格书下载地址
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2SK2912S数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-242SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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