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位置：首页 > IC中文资料第449页 > 2SK28

2SK28价格

参考价格：￥0.4550

型号：2SK2802ZV 品牌：HITACHI 备注：这里有2SK28多少钱，2024年最近7天走势，今日出价，今日竞价，2SK28批发/采购报价，2SK28行情走势销售排行榜，2SK28报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK2800

SiliconNChannelMOSFETHighSpeedPowerSwitching

•Lowon-resistance RDS(on)=15mΩtyp. •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK2800

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=15mΩtyp. •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2800-E

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=15mΩtyp. •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2802

SiliconNChannelMOSFETLowFrequencyPowerSwitching

Features •Lowon-resistance RDS(on)=0.2Ωtyp.(VGS=4V,ID=100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK)

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK2803

MOSFET

Sanken/MOSFET(2SK1177thru2SK3460)

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SK2804

MOSFET

Sanken/MOSFET(2SK1177thru2SK3460)

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SK2805

MOSFET

Sanken/MOSFET(2SK1177thru2SK3460)

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SK2806

N-channelMOS-FET

N-channelMOS-FET >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -AvalancheRated >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2806-01

N-channelMOS-FET

N-channelMOS-FET >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -AvalancheRated >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2807-01L

N-channelMOS-FET

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●Avalanche-proof Applications ●Switchingregulators ●DC-DCconverters ●Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2807-01S

N-channelMOS-FET

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●Avalanche-proof Applications ●Switchingregulators ●DC-DCconverters ●Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2808

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2808-01MR

N-channelMOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2809

N-channelMOS-FET

N-CHANNELSILICONPOWERMOSFET FAP-IIIBSERIES Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage Avalanche-proof Applications Switchingregulators DC-DCconverters Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2809-01MR

N-channelMOS-FET

N-CHANNELSILICONPOWERMOSFET FAP-IIIBSERIES Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage Avalanche-proof Applications Switchingregulators DC-DCconverters Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2823

NCHANNELMOSTYPE(FORPORTABLEEQUIPMENTHIGHSPEED,ANALOGSWITCHAPPLICATIONS)

ForPortableEquipment HighSpeedSwitchApplications AnalogSwitchApplications •Highinputimpedance •1.5Vgatedrive •Lowgatethresholdvoltage:Vth=0.5~1.0V •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2824

NCHANNELMOSTYPE(FORPORTABLEEQUIPMENTHIGHSPEEDSWITCH,ANALOGSWITCHAPPLICATIONS)

ForPortableEquipment HighSpeedSwitchApplications AnalogSwitchApplications •Highinputimpedance •1.5Vgatedrive •Lowgatethresholdvoltage:Vth=0.5~1.0V •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2825

NCHANNELMOSTYPE(FORPORTABLEEQUIPMENTHIGHSPEEDSWITCH,ANALOGSWITCHAPPLICATIONS)

ForPortableEquipment HighSpeedSwitchApplications AnalogSwitchApplications •Highinputimpedance •1.5Vgatedrive •Lowgatethresholdvoltage:Vth=0.5~1.0V •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2826

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=6.5mΩ(MAX.)(VGS=10V,ID=35A) RDS(on)2=9.7mΩ(MAX.)(VGS=4.0V,ID=35A) •LowCiss:Ciss=7200p

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2826

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2826-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2826-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=6.5mΩ(MAX.)(VGS=10V,ID=35A) RDS(on)2=9.7mΩ(MAX.)(VGS=4.0V,ID=35A) •LowCiss:Ciss=7200p

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2826-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2826-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK2826isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-stateResistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=9.7mΩMAX.(VGS=4.0

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2826-ZJ

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=6.5mΩ(MAX.)(VGS=10V,ID=35A) RDS(on)2=9.7mΩ(MAX.)(VGS=4.0V,ID=35A) •LowCiss:Ciss=7200p

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2828

SiliconNChannelMOSFETHighSpeedPowerSwitching

1.Lowon-resistance 2.Highspeedswitching 3.Lowdrivecurrent 4.Nosecondarybreakdown 5.SuitableforswitchingregulatorandDC–DCconverter 6.Avalancheratings

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK2832-01

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2833

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2833-R

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2834

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2834-01

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2835

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications Lowdrain−sourceONresistance:RDS(ON)=0.56Ω(typ.) Highforwardtransferadmittance:|Yfs|=4.5S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=200V) Enhancementmode:Vth=1.5to3.5V(VDS=10V,

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2835

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2838

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2838

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=0.84Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=4.4S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=400V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,I

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2839

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2841

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications Lowdrain−sourceONresistance:RDS(ON)=0.4Ω(typ.) Highforwardtransferadmittance:|Yfs|=8.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=400V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2841

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2842

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

K2842,2SK2842Datasheet HighSpeed,HighCurrentSwitchingApplications ChopperRegulator,DC-DCConverterandMotorDriveApplications.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2843

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDrive. *Lowdrain−sourceONresistance:RDS(ON)=0.54Ω(typ.) *Highforwardtransferadmittance:|Yfs|=9.0S(typ.) *Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) *Enhancementmode:Vth=2.0to4.0V(VDS=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2844

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain−sourceONresistance:RDS(ON)=16mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=26S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=30V) ●Enhancementmode:Vth=0.8to2.0V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2845

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC/DCConverterandMotorDriveApplications ●Lowdrain-sourceON-resistance:RDS(ON)=8.0Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=0.9S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2845

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2846

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2846

NCHANNELMOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications Lowdrain−sourceONresistance:RDS(ON)=4.2Ω(typ.) Highforwardtransferadmittance:|Yfs|=1.7S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2847

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2847

NCHANNELMOSTYPEHIGHSPEED,HIGHCURRENTSWITCHING,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

DC−DCConverterandMotorDriveApplications ●Lowdrain−sourceONresistance:RDS(ON)=1.1Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=7.0S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2848

MOSFET

Sanken/MOSFET(2SK1177thru2SK3460)

SankenSanken Electric Co Ltd.

三垦日本三垦

Sanken
2SK2849-01L

PowerMOSFET

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2850

N-ChannelEnhancementModePowerMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2850-01

N-ChannelEnhancementModePowerMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社ＦＵＪＩ

Fuji
2SK2851

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.055Ωtyp.(atVGS=10V,ID=2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=5A

HitachiHitachi, Ltd.

日立公司

Hitachi
2SK2851

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.055Ωtyp.(atVGS=10V,ID=2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=5A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2851TZ-E

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.055Ωtyp.(atVGS=10V,ID=2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=5A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SK2854

NCHANNELMOSTYPE(UHFBANDAMPLIFIERAPPLICATIONS)

UHFBANDAMPLIFIERAPPLICATION (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhighfrequencyPowerAmplifieroftelecommunicationsequipment.TheseTOSHIBAproductsareneitherintendednorwarrantedforanyotheruse.DonotusetheseTOSHIBAproductslistedinthisdocument

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2854

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2855

NCHANNELMOSTYPE(UHFBANDAMPLIFIERAPPLICATION)

UHFBANDAMPLIFIERAPPLICATION (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhighfrequencyPowerAmplifieroftelecommunicationsequipment.TheseTOSHIBAproductsareneitherintendednorwarrantedforanyotheruse.DonotusetheseTOSHIBAproductslistedinthisdocumente

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2856

NCHANNELSINGLEGATEMODULATIONDOPETYPE(UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS)

UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS ●LowNoiseFigure:NF=0.7dB(f=1.5GHz) ●HighGain:Ga=21.5dB(f=1.5GHz)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK2857

N-CHANNELMOSFIELDEFFECTTRANSISTORFORHIGHSPEEDSWITCHING

DESCRIPTION The2SK2857isaswitchingdevicewhichcanbedrivendirectlybya5Vpowersource. The2SK2857featuresalowon-stateresistanceandexcellentSwitchingCharacteristics,andissuitableforapplicationssuchasactuatordriver. FEATURES •Canbedrivenbya5Vpowerso

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SK2857

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI

2SK28产品属性

  • 类型

    描述

  • 型号

    2SK28

  • 制造商

    Renesas Electronics Corporation

2SK28供应商更多...

更新时间：2024-6-3 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
2SK2826-ZJ
NEC
22+
SOT-263
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
2SK2827
FUJITSU/富士通
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市永贝尔科技有限公司
2SK2827-01
FUJI
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
深圳市豪迈兴电子有限公司
2SK2826-Z
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市维尔达电子有限公司
2SK2827-01
FUJI
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
瀚佳科技(深圳)有限公司
2SK2827-01
FUJI
2020+
TO-220
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
深圳市一线半导体有限公司
2SK2826Z
08PB
60000
询价
深圳市昌和盛利电子有限公司
2SK2827
FUJI
23+
TO-220
9516
询价
深圳市惊羽科技有限公司
2SK2826-S
NEC-日本电气
24+25+/26+27+
TO-262-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
贸泽芯城（深圳）电子科技有限公司
2SK2827
FUJITSU/富士通
2021+
220
43000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价

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2SK28规格书下载地址

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