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2SK28价格

参考价格：￥0.4550

型号：2SK2802ZV 品牌：HITACHI 备注：这里有2SK28多少钱，2025年最近7天走势，今日出价，今日竞价，2SK28批发/采购报价，2SK28行情走势销售排行榜，2SK28报价。

型号	功能描述	生产厂家企业	LOGO
2SK2800	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 15 mΩtyp. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2800	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 15 mΩtyp. • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2800-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 15 mΩtyp. • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK2802	Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS(on) = 0. 2Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5V gate drive devices. • Small package (MPAK)	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2803	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2804	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2805	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2806	N-channel MOS-FET N-channel MOS-FET >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters	Fuji 富士通	Fuji
2SK2806-01	N-channel MOS-FET N-channel MOS-FET >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters	Fuji 富士通	Fuji
2SK2807-01L	N-channel MOS-FET Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● Avalanche-proof Applications ● Switching regulators ● DC-DC converters ● General purpose power amplifier	Fuji 富士通	Fuji
2SK2807-01S	N-channel MOS-FET Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● Avalanche-proof Applications ● Switching regulators ● DC-DC converters ● General purpose power amplifier	Fuji 富士通	Fuji
2SK2808	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2808-01MR	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2809	N-channel MOS-FET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier	Fuji 富士通	Fuji
2SK2809-01MR	N-channel MOS-FET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier	Fuji 富士通	Fuji
2SK2823	N CHANNEL MOS TYPE (FOR PORTABLE EQUIPMENT HIGH SPEED, ANALOG SWITCH APPLICATIONS) For Portable Equipment High Speed SwitchApplications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth= 0.5~1.0 V • Small package	TOSHIBA 东芝	TOSHIBA
2SK2824	N CHANNEL MOS TYPE (FOR PORTABLE EQUIPMENT HIGH SPEED SWITCH, ANALOG SWITCH APPLICATIONS) For Portable Equipment High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V • Small package	TOSHIBA 东芝	TOSHIBA
2SK2825	N CHANNEL MOS TYPE (FOR PORTABLE EQUIPMENT HIGH SPEED SWITCH, ANALOG SWITCH APPLICATIONS) For Portable Equipment High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V • Small package	TOSHIBA 东芝	TOSHIBA
2SK2826	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p	NEC 瑞萨	NEC
2SK2826	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0	RENESAS 瑞萨	RENESAS
2SK2826-S	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0	RENESAS 瑞萨	RENESAS
2SK2826-S	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p	NEC 瑞萨	NEC
2SK2826-Z	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0	RENESAS 瑞萨	RENESAS
2SK2826-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0	RENESAS 瑞萨	RENESAS
2SK2826-ZJ	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p	NEC 瑞萨	NEC
2SK2828	Silicon N Channel MOS FET High Speed Power Switching 1. Low on-resistance 2. High speed switching 3. Low drive current 4. No secondary breakdown 5. Suitable for switching regulator and DC–DC converter 6. Avalanche ratings	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2832-01	Power MOSFET	Fuji 富士通	Fuji
2SK2833	Power MOSFET	Fuji 富士通	Fuji
2SK2833-R	Power MOSFET	Fuji 富士通	Fuji
2SK2834	Power MOSFET	Fuji 富士通	Fuji
2SK2834-01	Power MOSFET	Fuji 富士通	Fuji
2SK2835	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : \|Yfs\| = 4.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V,	TOSHIBA 东芝	TOSHIBA
2SK2835	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2838	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2838	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 0.84 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 4.4 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 400 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, I	TOSHIBA 东芝	TOSHIBA
2SK2839	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS	TOSHIBA 东芝	TOSHIBA
2SK2841	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS(ON)= 0.4 Ω(typ.) High forward transfer admittance : \|Yfs\| = 8.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 400 V) Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V,	TOSHIBA 东芝	TOSHIBA
2SK2841	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2842	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) K2842, 2SK2842 Datasheet High Speed, High Current Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications.	TOSHIBA 东芝	TOSHIBA
2SK2843	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive. * Low drain−source ON resistance : RDS(ON)= 0.54 Ω(typ.) * High forward transfer admittance : \|Yfs\| = 9.0 S (typ.) * Low leakage current : IDSS= 100 μA (max) (VDS= 600 V) * Enhancement mode : Vth= 2.0 to 4.0 V (VDS=	TOSHIBA 东芝	TOSHIBA
2SK2844	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) ● High forward transfer admittance : \|Yfs\| = 26 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) ● Enhancement mode : Vth = 0.8 to 2.0 V	TOSHIBA 东芝	TOSHIBA
2SK2845	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC/DC Converter and Motor Drive Applications ● Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 0.9 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID	TOSHIBA 东芝	TOSHIBA
2SK2845	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2846	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2846	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS(ON)= 4.2 Ω(typ.) High forward transfer admittance : \|Yfs\| = 1.7 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 600 V) Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID=	TOSHIBA 东芝	TOSHIBA
2SK2847	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2847	N CHANNEL MOS TYPE HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 7.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK2848	MOSFET Sanken / MOS FET ( 2SK1177 thru 2SK3460)	Sanken 三垦	Sanken
2SK2849-01L	Power MOSFET	Fuji 富士通	Fuji
2SK2850	N-Channel Enhancement Mode Power MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK2850-01	N-Channel Enhancement Mode Power MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK2851	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A	RENESAS 瑞萨	RENESAS
2SK2851	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2851TZ-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. (at VGS = 10 V, ID = 2.5 A) • 4 V gate drive devices. • Large current capacitance ID = 5 A	RENESAS 瑞萨	RENESAS
2SK2854	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2854	N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS) UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in thisdocument	TOSHIBA 东芝	TOSHIBA
2SK2855	N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATION) UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document e	TOSHIBA 东芝	TOSHIBA
2SK2856	N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) UHF BAND LOW NOISE AMPLIFIER APPLICATIONS ● Low Noise Figure : NF = 0.7dB (f=1.5GHz) ● High Gain : Ga = 21.5dB (f=1.5GHz)	TOSHIBA 东芝	TOSHIBA
2SK2857	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. FEATURES • Can be driven by a 5V power so	NEC 瑞萨	NEC
2SK2857	MOS Field Effect Transistor ■ Features ● VDS (V) = 60V ● ID = 4 A ● RDS(ON)	KEXIN 科信电子	KEXIN

2SK28产品属性

类型
描述
型号
2SK28
制造商
Renesas Electronics Corporation

2SK28供应商更多...

更新时间：2025-12-25 11:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	2SK283	TOSHIBA/东芝	2511	SOT-23	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市宇创芯科技有限公司	2SK283	ON/安森美	24+	SOT-23	9600	原装现货,优势供应,支持实单!	询价
贸泽芯城（深圳）电子科技有限公司	2SK2827	FUJITSU/富士通	23+	220	43000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市赛美科科技有限公司	2SK2828	HITACHI		TO3P	9500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市威尔健半导体有限公司	2SK2827-01	NEXPERIA/安世	23+	SOT109-1	69820	终端可以免费供样,支持BOM配单!	询价
艾睿（深圳）半导体有限公司	2SK2828	HITACHI/日立	2447	TO-3P	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市华斯顿科技有限公司	2SK2828	HITACHI	25+23+	TO3P	34756	绝对原装正品全新进口深圳现货	询价
深圳市一线半导体有限公司	2SK2826Z		24+		60000		询价
深圳市创新迹电子有限公司	2SK283	TOSHIBA/东芝	22+	SOT-23	20000	只做原装	询价
深圳市河锋鑫科技有限公司	2SK2827	富士通	TO-220	22+	6000	十年配单,只做原装	询价

2SK28芯片相关品牌

2SK28规格书下载地址

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2SK28数据表相关新闻

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