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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2826-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0 | RENESAS 瑞萨 |   | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0 | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：324.35 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0 | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2826 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-state Resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ MAX. (VGS = 4.0 | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 6.5 mΩ(MAX.) (VGS= 10 V, ID= 35 A) RDS(on)2= 9.7 mΩ(MAX.) (VGS= 4.0 V, ID= 35 A) • Low Ciss: Ciss= 7200 p | NEC 瑞萨 | |
2SK2826-Z产品属性
- 类型
描述
- 型号
2SK2826-Z
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJI |
NEW |
TO-220 |
9516 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
||||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
ON/安森美 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI |
24+ |
NA/ |
1240 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FUJITSU/富士通 |
23+ |
220 |
43000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HITACHI |
25+23+ |
TO3P |
34756 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
TO-263 |
36800 |
||||
HITACHI |
TO3P |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
2SK2826-Z规格书下载地址
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2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
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